ScienceGate
Advanced Search
Author Search
Journal Finder
Blog
Sign in / Sign up
ScienceGate
Search
Author Search
Journal Finder
Blog
Sign in / Sign up
Gate current modeling for MOSFETs
Proceedings of the Fifth IEEE International Caracas Conference on Devices, Circuits and Systems, 2004.
◽
10.1109/iccdcs.2004.1393343
◽
2005
◽
Author(s):
A. Gehring
◽
S. Selberherr
Keyword(s):
Gate Current
Download Full-text
Related Documents
Cited By
References
A Common-Gate Current-Reuse UWB LNA for Wireless Applications in 90 nm CMOS
Wireless Personal Communications
◽
10.1007/s11277-021-08287-5
◽
2021
◽
Author(s):
Vikram Singh
◽
Sandeep Kumar Arya
◽
Manoj Kumar
Keyword(s):
Gate Current
◽
Wireless Applications
◽
Current Reuse
◽
Common Gate
Download Full-text
An Adaptive Gate Current Modulator based on Fuzzy PID for Voltage Equalization in Series Connected IGBTs
2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT)
◽
10.1109/icsict49897.2020.9278250
◽
2020
◽
Author(s):
Jia-Li Wan
◽
Ze-Hong Li
◽
Xiao Zeng
◽
Min Ren
◽
Wei Gao
◽
...
Keyword(s):
Fuzzy Pid
◽
Gate Current
◽
In Series
Download Full-text
Substrate current, gate current and lifetime prediction of deep-submicron nMOS devices
Solid-State Electronics
◽
10.1016/j.sse.2004.11.020
◽
2005
◽
Vol 49
(3)
◽
pp. 505-511
◽
Cited By ~ 6
Author(s):
Zhi Cui
◽
Juin J. Liou
◽
Yun Yue
◽
Hei Wong
Keyword(s):
Deep Submicron
◽
Lifetime Prediction
◽
Gate Current
◽
Substrate Current
Download Full-text
Random telegraph signal noise in gate current of unstressed and reverse-bias-stressed AlGaN/GaN high electron mobility transistors
Applied Physics Letters
◽
10.1063/1.3701164
◽
2012
◽
Vol 100
(14)
◽
pp. 143507
◽
Cited By ~ 11
Author(s):
P. Marko
◽
A. Alexewicz
◽
O. Hilt
◽
G. Meneghesso
◽
E. Zanoni
◽
...
Keyword(s):
Electron Mobility
◽
Reverse Bias
◽
High Electron Mobility Transistors
◽
High Electron
◽
High Electron Mobility
◽
Gate Current
◽
Random Telegraph Signal
◽
Signal Noise
◽
Electron Mobility Transistors
Download Full-text
Power optimal gate current profiles for the slew rate control of Smart Power ICs
IFAC Proceedings Volumes
◽
10.3182/20140824-6-za-1003.00124
◽
2014
◽
Vol 47
(3)
◽
pp. 7190-7195
Author(s):
M. Blank
◽
T. Glück
◽
A. Kugi
◽
H-P. Kreuter
Keyword(s):
Rate Control
◽
Slew Rate
◽
Smart Power
◽
Gate Current
Download Full-text
Conditions for Turning on a Thyristor by Short Gate Current Pulses
Physics of p-n Junctions and Semiconductor Devices
◽
10.1007/978-1-4757-1232-2_45
◽
1971
◽
pp. 216-223
◽
Cited By ~ 6
Author(s):
A. I. Uvarov
Keyword(s):
Gate Current
◽
Current Pulses
Download Full-text
Technology for low gate current AlInAs/InP heterojunction FETs
1993 (5th) International Conference on Indium Phosphide and Related Materials
◽
10.1109/iciprm.1993.380597
◽
2002
◽
Author(s):
K. Nait-Zerrad
◽
G. Post
◽
F. Balestra
Keyword(s):
Gate Current
Download Full-text
Online junction temperature measurement using peak gate current
2015 IEEE Applied Power Electronics Conference and Exposition (APEC)
◽
10.1109/apec.2015.7104511
◽
2015
◽
Cited By ~ 9
Author(s):
Nick Baker
◽
Stig Munk-Nielsen
◽
Francesco Iannuzzo
◽
Marco Liserre
Keyword(s):
Temperature Measurement
◽
Junction Temperature
◽
Gate Current
Download Full-text
Voltage gradient limitation of IGBTS by optimised gate-current profiles
2008 IEEE Power Electronics Specialists Conference
◽
10.1109/pesc.2008.4592512
◽
2008
◽
Cited By ~ 16
Author(s):
G. Schmitt
◽
R. Kennel
◽
J. Holtz
Keyword(s):
Voltage Gradient
◽
Gate Current
Download Full-text
Computationally efficient quantum-mechanical technique to calculate the direct tunneling gate current in metal-oxide-semiconductor structures
Journal of Applied Physics
◽
10.1063/1.1589173
◽
2003
◽
Vol 94
(3)
◽
pp. 2046-2052
◽
Cited By ~ 4
Author(s):
M. M. A. Hakim
◽
A. Haque
Keyword(s):
Metal Oxide
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Quantum Mechanical
◽
Computationally Efficient
◽
Gate Current
◽
Semiconductor Structures
◽
Direct Tunneling
Download Full-text
Sign in / Sign up
Close
Export Citation Format
Close
Share Document
Close