Design of Small Size SPDT Switch with Low Insertion Loss, High Isolation and AMR (Absolute Maximum Ratings) Performance

2021 ◽  
Author(s):  
SungHwan Paik ◽  
KangYoon Lee
Keyword(s):  
Insertion Loss ◽  
Absolute Maximum ◽  
High Isolation ◽  
Low Insertion Loss

scholarly journals Design and simulation of low actuation voltage RF MEMS shunt capacitive switch with serpentine flexures&rectangular perforations

2018 ◽  
Vol 7 (2.31) ◽  
pp. 4 ◽  
Author(s):  
K Jayavardhani ◽  
S K. Noureen Fathima ◽  
K Bhima Sankar ◽  
K Kavya Sri ◽  
S Sunithamani
Keyword(s):  
Insertion Loss ◽  
Rf Mems ◽  
Actuation Voltage ◽  
Air Gap ◽  
Spring Constant ◽  
Squeeze Film ◽  
Capacitive Switch ◽  
High Isolation ◽  
Low Insertion Loss ◽  
Rf Performance

This paper presents the design and simulation of RF MEMS shunt capacitive switch with low actuation voltage, low insertion loss and high isolation. Actuation voltage depends on the parameters like air gap, spring constant and actuation area. In this design, we have proposed a serpentine meander structure to reduce the spring constant of the beam thus reducing actuation voltage. The rectangular perforation is used to reduce the squeeze film damping by decreasing the mass of the switch. The proposed switch has attained a low actuation voltage of 4.5V for a displacement of 0.84μm. The air gap between the beam and the dielectric is 1μm. This radio frequency (RF) MEMS shunt switch is designed and simulated using COMSOL Multiphysics 5.2. The RF performance of the shunt switch is analyzed in Ansoft HFSS 13 and the results show that the return loss was about -13.50 dB at 20GHz in the OFF state and -8.5 dB at 18 GHz in the ON state. A high isolation of -36.00 dB was achieved in the OFF state at a frequency of 5GHz and a low insertion loss is obtained. The results show that the switch is suitable for wireless applications operating in the frequency range from 5 to 20GHz. 

scholarly journals Active inductor based fully integrated CMOS transmit/ receive switch for 2.4 GHz RF transceiver

2016 ◽  
Vol 88 (2) ◽  
pp. 1089-1098 ◽  
Author(s):  
Mohammad A.S. Bhuiyan ◽  
Yeoh Zijie ◽  
Jae S. Yu ◽  
Mamun B.I. Reaz ◽  
Noorfazila Kamal ◽  
...  
Keyword(s):  
Insertion Loss ◽  
High Performance ◽  
Active Inductor ◽  
Cmos Process ◽  
Rf Transceiver ◽  
Trade Off ◽  
High Isolation ◽  
Rf Transceivers ◽  
Low Insertion Loss ◽  
Parallel Resonance

Modern Radio Frequency (RF) transceivers cannot be imagined without high-performance (Transmit/Receive) T/R switch. Available T/R switches suffer mainly due to the lack of good trade-off among the performance parameters, where high isolation and low insertion loss are very essential. In this study, a T/R switch with high isolation and low insertion loss performance has been designed by using Silterra 0.13µm CMOS process for 2.4GHz ISM band RF transceivers. Transistor aspect ratio optimization, proper gate bias resistance, resistive body floating and active inductor-based parallel resonance techniques have been implemented to achieve better trade-off. The proposed T/R switch exhibits 0.85dB insertion loss and 45.17dB isolation in both transmit and receive modes. Moreover, it shows very competitive values of power handling capability (P1dB) and linearity (IIP3) which are 11.35dBm and 19.60dBm, respectively. Due to avoiding bulky inductor and capacitor, the proposed active inductor-based T/R switch became highly compact occupying only 0.003mm2 of silicon space; which will further trim down the total cost of the transceiver. Therefore, the proposed active inductor-based T/R switch in 0.13µm CMOS process will be highly useful for the electronic industries where low-power, high-performance and compactness of devices are the crucial concerns.

DC~10.6GHz Ultra Wideband SPDT Switch

2013 ◽  
Vol 798-799 ◽  
pp. 520-525 ◽  
Author(s):  
Cheng Peng Liu ◽  
Jian Gang Shi ◽  
Zheng Rong He ◽  
Wei Zou
Keyword(s):  
Insertion Loss ◽  
High Performance ◽  
Return Loss ◽  
Ultra Wideband ◽  
Trade Off ◽  
High Isolation ◽  
Low Insertion Loss ◽  
Off Time

a novel configuration for a novel ultra wideband switch is presented in this paper. This switch using 0.5um GaAs process in ADS2008 simulator. Switch should be designed to trade-off insertion loss, isolation, bandwidth, and return loss. The aims of design are to provide low insertion loss along with high isolation. The design using integration inductor and resistor in parallel, and this switch exhibits high performance: over DC-10.6GHz, insertion loss is lower than-1.624dB; the ripple variation of insertion loss is less than ±0.25dB; The isolation is lower than-51.336dB; input return loss is lower than-16.402dB; on state, output return loss is lower than-15.919dB; off state, output return loss is lower than-18.294dB; on and off time are less than 4ns.

A high-isolation low-insertion-loss filter-integrated PIN diode antenna switch

2009 ◽  
Author(s):  
P. Phudpong ◽  
N. Youngthanisara ◽  
M. Kitjaroen ◽  
P. Rattanawan ◽  
S. Siwamogsatham
Keyword(s):  
Insertion Loss ◽  
Pin Diode ◽  
High Isolation ◽  
Low Insertion Loss

scholarly journals Newly Developed Compact Isolation Transformers for Signaling Networks

2021 ◽  
Vol 16 ◽  
pp. 178-184 ◽  
Author(s):  
Hitoshi Kijima ◽  
Chikashi Okabayashi
Keyword(s):  
Frequency Band ◽  
Insertion Loss ◽  
Signaling Networks ◽  
Lightning Protection ◽  
Common Mode ◽  
Transmission Frequency ◽  
High Isolation ◽  
Common Mode Voltage ◽  
Low Insertion Loss ◽  
Isolation Transformers

This paper describes the specifications of newly developed compact isolation transformers for signaling networks such as telecommunication installations and information installations. These networks can use isolation transformers to mitigate surges occurring on services. It means that isolation transformers are used to eliminate the affect of noise and common mode voltage. Also the isolation transformers provide lightning protection for these networks. As the specifications of conventional isolation transformers are not sufficient, small-sized isolation transformers were developed. The new isolation transformers offer high isolation withstand voltage (50kV, 1.2/50μs) with low insertion loss (0.5dB) in the transmission frequency band of 500Hz to 30 MHz. The weight is only 0.3kg and the size is only 6×6×5cm.

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