DC~10.6GHz Ultra Wideband SPDT Switch

2013 ◽  
Vol 798-799 ◽  
pp. 520-525 ◽  
Author(s):  
Cheng Peng Liu ◽  
Jian Gang Shi ◽  
Zheng Rong He ◽  
Wei Zou
Keyword(s):  
Insertion Loss ◽  
High Performance ◽  
Return Loss ◽  
Ultra Wideband ◽  
Trade Off ◽  
High Isolation ◽  
Low Insertion Loss ◽  
Off Time

a novel configuration for a novel ultra wideband switch is presented in this paper. This switch using 0.5um GaAs process in ADS2008 simulator. Switch should be designed to trade-off insertion loss, isolation, bandwidth, and return loss. The aims of design are to provide low insertion loss along with high isolation. The design using integration inductor and resistor in parallel, and this switch exhibits high performance: over DC-10.6GHz, insertion loss is lower than-1.624dB; the ripple variation of insertion loss is less than ±0.25dB; The isolation is lower than-51.336dB; input return loss is lower than-16.402dB; on state, output return loss is lower than-15.919dB; off state, output return loss is lower than-18.294dB; on and off time are less than 4ns.

scholarly journals Active inductor based fully integrated CMOS transmit/ receive switch for 2.4 GHz RF transceiver

2016 ◽  
Vol 88 (2) ◽  
pp. 1089-1098 ◽  
Author(s):  
Mohammad A.S. Bhuiyan ◽  
Yeoh Zijie ◽  
Jae S. Yu ◽  
Mamun B.I. Reaz ◽  
Noorfazila Kamal ◽  
...  
Keyword(s):  
Insertion Loss ◽  
High Performance ◽  
Active Inductor ◽  
Cmos Process ◽  
Rf Transceiver ◽  
Trade Off ◽  
High Isolation ◽  
Rf Transceivers ◽  
Low Insertion Loss ◽  
Parallel Resonance

Modern Radio Frequency (RF) transceivers cannot be imagined without high-performance (Transmit/Receive) T/R switch. Available T/R switches suffer mainly due to the lack of good trade-off among the performance parameters, where high isolation and low insertion loss are very essential. In this study, a T/R switch with high isolation and low insertion loss performance has been designed by using Silterra 0.13µm CMOS process for 2.4GHz ISM band RF transceivers. Transistor aspect ratio optimization, proper gate bias resistance, resistive body floating and active inductor-based parallel resonance techniques have been implemented to achieve better trade-off. The proposed T/R switch exhibits 0.85dB insertion loss and 45.17dB isolation in both transmit and receive modes. Moreover, it shows very competitive values of power handling capability (P1dB) and linearity (IIP3) which are 11.35dBm and 19.60dBm, respectively. Due to avoiding bulky inductor and capacitor, the proposed active inductor-based T/R switch became highly compact occupying only 0.003mm2 of silicon space; which will further trim down the total cost of the transceiver. Therefore, the proposed active inductor-based T/R switch in 0.13µm CMOS process will be highly useful for the electronic industries where low-power, high-performance and compactness of devices are the crucial concerns.

GaAs MMIC Wideband SP8T Switch

2014 ◽  
Vol 599-601 ◽  
pp. 1527-1530
Author(s):  
Cheng Peng Liu ◽  
Guo Qiang Wang
Keyword(s):  
Insertion Loss ◽  
High Performance ◽  
Return Loss ◽  
Chip Size ◽  
Off Time

this paper mainly introduces a GaAs MMIC Wideband SP8T Switch. Firstly, every possible configuration is contrasted, the theories of basic GaAs switch configurations are mentioned. Secondly, the theories of basic GaAs switch configurations are mentioned. Subsequently, appropriate topology is selected for this SP8T switch. This switch has been realized by 0.5µm GaAs pHEMT process. this switch exhibits high performance: over DC~2.5GHz, insertion loss is lower than 1.27dB; The isolation is lower than 30dB; the ripple variation of insertion loss is less than ±0.1dB; input return loss is lower than 22dB; on state, output return loss is lower than 18dB; off state, over 0.2GHz-2.5GHz, output return loss is lower than 10dB; on and off time are less than 75ns. The layout of the switch with a chip size is 1.11 mm×1.51mm.

Wideband SPDT Switch With TTL Control

2014 ◽  
Vol 599-601 ◽  
pp. 1820-1823 ◽  
Author(s):  
Guo Qiang Wang ◽  
Cheng Peng Liu
Keyword(s):  
Insertion Loss ◽  
High Performance ◽  
Return Loss ◽  
Chip Size ◽  
Off Time

this paper mainly introduces a wideband SPDT switch with TTL control. Firstly, everypossible configuration is contrasted, the theories of basic GaAs switch configurations arementioned. Secondly, the theories of basic GaAs switch configurations are mentioned.Subsequently, appropriate topology is selected for this SPDT switch. This switch has been realizedby 0.5µm GaAs pHEMT process. this switch exhibits high performance: over DC~4GHz, insertionloss is lower than 1dB; The isolation is lower than 50dB; the ripple variation of insertion loss is lessthan ±0.15dB; input return loss is lower than 14dB; on state, output return loss is lower than 16dB;off state, over 0.2GHz-4GHz, output return loss is lower than 12dB; on and off time are less than55ns. The layout of the switch with a chip size is 0.81 mm×1.22mm.

scholarly journals A Technique for Tunable Filters with Low Insertion Loss and Narrow Bandwidth

2018 ◽  
Vol 38 ◽  
pp. 03039
Author(s):  
Chang Zhou ◽  
Chen Ji ◽  
Gen Ping Wu
Keyword(s):  
Insertion Loss ◽  
Return Loss ◽  
Tunable Filters ◽  
Tunable Filter ◽  
Center Frequency ◽  
Pin Diodes ◽  
Lc Filters ◽  
Narrow Bandwidth ◽  
Low Insertion Loss ◽  
Resonant Capacitor

A technique for tunable filters with low insertion loss and narrow bandwidth is proposed in the form of comb-line structure. Both resonant capacitor with pin-diodes and resonant inductance in the tunable filter were analyzed and the main source of insertion loss was obtained. A series of filters with same pin-diodes, center frequency, absolute bandwidth and low return loss was simulated. The results showed that, by changing the values of the resonant capacitor and inductance, insertion loss of the filter can be greatly restricted. This technique will allow the design of tunable LC filters with low insertion loss and narrow bandwidth.

A low insertion loss low-pass filter based on single comb-shaped spoof surface plasmon polaritons

2019 ◽  
Vol 11 (08) ◽  
pp. 792-796
Author(s):  
Luping Li ◽  
Lijuan Dong ◽  
Peng Chen ◽  
Kai Yang
Keyword(s):  
Surface Plasmon ◽  
Insertion Loss ◽  
Return Loss ◽  
Comparison Result ◽  
Pass Filter ◽  
Low Pass Filter ◽  
Low Pass ◽  
Low Insertion Loss ◽  
Lower Insertion Loss ◽  
Single Comb

AbstractThis paper presents a low insertion loss low-pass filter based on the spoof surface plasmon polariton (SSPP) with single comb-shape. Compared with traditional ones, the proposed filter provides lower insertion loss and return loss by optimizing the structural parameters of the mode conversion and SSPP parts. According to the measurement results, the average insertion loss of the fabricated filter is 0.41 dB and the return loss of which at the near-zero-hertz band is <−25.9 dB. The S parameter comparison result between the unoptimized and optimized filters demonstrates that the optimized filter provides lower insertion loss and return loss, smaller size, and better out-of-band rejection. The dispersion comparison result reveals the reasons behind the improved performances. The better performances of the optimized filter proves that breaking the regularity of traditional SSPP filters is beneficial to the filter's performances.

scholarly journals Design and simulation of low actuation voltage RF MEMS shunt capacitive switch with serpentine flexures&rectangular perforations

2018 ◽  
Vol 7 (2.31) ◽  
pp. 4 ◽  
Author(s):  
K Jayavardhani ◽  
S K. Noureen Fathima ◽  
K Bhima Sankar ◽  
K Kavya Sri ◽  
S Sunithamani
Keyword(s):  
Insertion Loss ◽  
Rf Mems ◽  
Actuation Voltage ◽  
Air Gap ◽  
Spring Constant ◽  
Squeeze Film ◽  
Capacitive Switch ◽  
High Isolation ◽  
Low Insertion Loss ◽  
Rf Performance

This paper presents the design and simulation of RF MEMS shunt capacitive switch with low actuation voltage, low insertion loss and high isolation. Actuation voltage depends on the parameters like air gap, spring constant and actuation area. In this design, we have proposed a serpentine meander structure to reduce the spring constant of the beam thus reducing actuation voltage. The rectangular perforation is used to reduce the squeeze film damping by decreasing the mass of the switch. The proposed switch has attained a low actuation voltage of 4.5V for a displacement of 0.84μm. The air gap between the beam and the dielectric is 1μm. This radio frequency (RF) MEMS shunt switch is designed and simulated using COMSOL Multiphysics 5.2. The RF performance of the shunt switch is analyzed in Ansoft HFSS 13 and the results show that the return loss was about -13.50 dB at 20GHz in the OFF state and -8.5 dB at 18 GHz in the ON state. A high isolation of -36.00 dB was achieved in the OFF state at a frequency of 5GHz and a low insertion loss is obtained. The results show that the switch is suitable for wireless applications operating in the frequency range from 5 to 20GHz. 

scholarly journals Compact Microstrip Lowpass Filter with Low Insertion Loss for UWB Medical Applications

2018 ◽  
Vol 2018 ◽  
pp. 1-5 ◽  
Author(s):  
Mohammed A. Aseeri ◽  
Meshaal A. Alyahya ◽  
Hatim A. Bukhari ◽  
Hussein N. Shaman
Keyword(s):  
Insertion Loss ◽  
Elliptic Function ◽  
Ultra Wideband ◽  
Medical Applications ◽  
Lowpass Filter ◽  
Attenuation Level ◽  
Low Insertion Loss ◽  
Line Elements ◽  
Good Agreement ◽  
Rejection Band

A microstrip lowpass filter based on transmission line elements for UWB medical applications is proposed in this paper. The filter is constructed of two symmetric shunt open-circuited stubs and three series unit elements. The filter is designed to exhibit an elliptic function response with equal ripple in the passband and the rejection band. A prototype is successfully designed, fabricated, and measured, where a good agreement is attained. The filter shows a high filtering selectivity and an ultra-wide stopband up to 20 GHz with an attenuation level of more than 20-dB. The filter is compact and has a low insertion loss and an ultra-wideband (UWB) rejection which makes it attractive for many technologies such as UWB medical applications.

Broadband Transition between Rectangular Waveguide and Substrate Integrated Waveguide Based on Double Rhombus Antenna Probe

2014 ◽  
Vol 668-669 ◽  
pp. 799-802
Author(s):  
Hai Yan Jin ◽  
Teng Yue
Keyword(s):  
Insertion Loss ◽  
Rectangular Waveguide ◽  
Return Loss ◽  
Substrate Integrated Waveguide ◽  
Metal Waveguide ◽  
Low Insertion Loss ◽  
Better Than ◽  
Good Agreement

The paper presents a design of rectangular waveguide-SIW transition, which provides a broadband and low insertion loss performance. The broadband transition is realized by using double-rhombus antenna probe inserted into rectangular metal waveguide. The transition is simulated and measured at 9-20GHz. The measured results show that a good agreement with simulation and an insertion loss less than 2.8 dB and a return loss better than 10 dB are obtained at 10–18.5 GHz for a back-to-back structure.

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