Zno:In thin solid films deposited by chemical spray. Effect of deposition temperature on the electrical, optical, structural and morphological properties

Author(s):  
H. Gomez ◽  
J. L. Gonzalez-Vidal ◽  
L. Castellanos ◽  
A. Maldonado ◽  
M. de la L. Olvera
Author(s):  
Mikhail V. Gapanovich ◽  
Natalia A. Tikhonina ◽  
Tatiana S. Kokovina ◽  
Dmitry N. Varseev ◽  
Vladimir V. Rakitin ◽  
...  

Abstract. The effect of bath temperature (60-90 °C) on structural, optical and electrical propertiesof CdS thin films deposited by chemical bath deposition (CBD) at a constant precursorconcentration and deposition time was studied. From the XRD analysis, it was found that thestructure of CdS thin fi lms varied with temperature. At lower temperature hexagonal structurewas dominated while at high temperature, the cubic structure was prominent. The band gap ofthe as-prepared CdS thin fi lms was calculated from the UV-Vis spectroscopic data, and it wasfound to be decreased with the increase of temperature. The resistivity of the CdS thin fi lms alsodecreased with the increase in temperature.       REFERENCES1. Kumar S., Sharma P., Sharma V. CdS nanofi lms: effect of deposition temperature on morphology andoptical band gap. Physica Scripta, 2013, v. 88(4), p. 045603. DOI: https://doi.org/10.1088/0031-8949/88/04/0456032. Rondiyaa S., Rokadea A., Gabhalea B., Pandharkara S., Chaudharia M., Dateb A., et al. Effectof bath temperature on optical and morphology properties of CdS thin fi lms grown by chemical bathdeposition. Energy Procedia, 2017, v. 110, pp. 202–209. DOI: https://doi.org/10.1016/j.egypro.2017.03.1283. Fangyang Liu, Yanqing Lai, Jun Liu, Bo Wang, Sanshuang Kuang, Zhian Zhang, et al. Characterizationof chemical bath deposited CdS thin fi lms at different deposition temperature. J. Alloys Compd., 2010,v. 493(1–2), pp. 305–308. DOI: https://doi.org/10.1016/j.jallcom.2009.12.0884. Hariech S., Aida M. S., Bougdira J., Belmahi M., Medjahdi G., Genиve D., et al. Cadmium sulfi de thinfi lms growth by chemical bath deposition. J. Semicond., 2018, v. 39(3), p. 034004. DOI: https://doi.org/10.1088/1674-4926/39/3/0340045. Mane R. S., Lokhande C. D. Chemical deposition method for metal chalcogenide thin fi lms. J. Mater.Chem. Phys., 2000, v. 65(1), p. 1–31. DOI: https://doi.org/10.1016/s0254-0584(00)00217-06. Hodes G. Chemical solution deposition of semiconductor fi lms. Monograph, Boca Raton, CRCPress, 2002, 388 p. DOI: https://doi.org/10.1201/97802039090967. George P. J., Sanchez-Juarez A., Nair P. K. Modifi cation of electrical, optical and crystalline propertiesof chemically deposited CdS fi lms by thermal diffusion of indium and tin. Semicond. Sci. Technol., 1996, v.11(7), pp. 1090–1095. DOI: https://doi.org/10.1088/0268-1242/11/7/0218. Oliva A. I., Solis-Canto O., Castro-Rodriguez R., Quintana P. Formation of the band gap energy on CdSthin fi lms growth by two different techniques Thin Solid Films, 2001, v. 391(1), pp. 28–35. DOI: https://doi.org/10.1016/s0040-6090(01)00830-69. Lejmi N., Savadogo O. The effect of heteropolyacids and isopolyacids on the properties ofchemically bath deposited CdS thin fi lms. Sol. Energy Mater. Sol. Cells, 2001, v. 70(1), pp. 71–83. DOI: https://doi.org/10.1016/s0927-0248(00)00412-810. Gray D.E. American Institute of Physics Handbook. 3rd Edition, McGraw-Hill, New York, pp. 4–58.11. Ravi Kant Choubey, Dipti Desai, Kale S. N., Sunil Kumar. Effect of annealing treatment anddeposition temperature on CdS thin fi lms for CIGS solar cells applications. J. Mater. Sci: Mater. in Elec.,2016, v. 27(8), pp. 7890–7898. DOI: https://doi.org/10.1007/s10854-016-4780-212. Lo Y. S., Choubey R. K., Yu W. C., Hsu W. T., Lan C. W. Shallow bath chemical deposition of CdSthin fi lm. Thin Solid Films, 2011, v. 520(1), pp. 217-223. DOI: https://doi.org/10.1016/j.tsf.2011.07.03513. Cortes A., Gomez H., Marotti R. E., Riveros G., Dalchiele E. A. Grain size dependence of the bandgapin chemical bath deposited CdS thin fi lms. Sol. Energy Mater. Sol. Cells, 2004, v. 82(1-2), pp. 21–34. DOI:https://doi.org/10.1016/j.solmat.2004.01.002 14. Ahmad F. R., Yakimov A., Davis R. J., Her J. H., Cournoyer J. R., Ayensu N. M. Effect of thermal annealingon the properties of cadmium sulfi de deposited via chemical bath deposition. Thin Solid Films, 2013,v. 535, pp. 166–170. DOI: https://doi.org/10.1016/j.tsf.2012.10.08515. Rakhshani A. E., Al-Azab A. S. Characterization of CdS fi lms prepared by chemical-bath deposition.J. Phys. Condens. Matter., 2000, v. 12, pp. 8745–8756. DOI: https://doi.org/10.1088/0953-8984/12/40/31616. Al Kuhaimi S. A. // Vacuum, 1998, v. 51, pp. 349–55.17. Zelaya-Angel O., Alvarado-Gil J. J., Lozada-Morales R., Vargas H., Ferreira da Silva A. Band-gapshift in CdS semiconductor by photoacoustic spectroscopy: Evidence of a cubic to hexagonal lattice transition.Appl. Phys. Lett., 1994, v. 64(3), pp. 291–293. DOI: https://doi.org/10.1063/1.11118418. Chopra K. L. Thin Film Phenomena. McGraw-Hill, New York, 1969, 266 p.19. Pattabi M., Uchil J. Synthesis of cadmium sulphide nanoparticles. Sol. Energy Mater. Sol. Cells, 2000,v. 63(4), pp. 309–314. DOI: https://doi.org/10.1016/s0927-0248(00)00050-720. Hani Khallaf, Isaiah O. Oladeji, Guangyu Chai, Lee Chow. Characterization of CdS thin fi lms grown bychemical bath deposition using four different cadmium sources. Thin Solid Films, 2008, v. 516(21), pp. 7306–7312. DOI: https://doi.org/10.1016/j.tsf.2008.01.00421. Sasikala G., Thilakan P., Subramanian C. Modifi cation in the chemical bath deposition apparatus,growth and characterization of CdS semiconducting thin fi lms for photovoltaic applications. Sol. Ener gyMater. Sol. Cells, 2000, v. 62(3), pp. 275–293. DOI: https://doi.org/10.1016/s0927-0248(99)00170-122. Toma A., Vigil O., Alvarado-Gil J. J., Lozada-Morales R., Zelaya-Angel O., Vargas H., et al. Infl uenceof thermal annealings in different atmospheres on the band-gap shift and resistivity of CdS thin fi lms. J. Appl.Phys., 1995, v. 78(4), p. 2204–2207. DOI: https://doi.org/10.1063/1.360136


1992 ◽  
Vol 282 ◽  
Author(s):  
Clayton W. Bates ◽  
Elizabeth B. Varner ◽  
Svetlana Alshvang ◽  
Keith Summers

ABSTRACTChemical spray pyrolysis (CSP) is a technique in which compounds of the constituents of the thin film to be fabricated are dissolved in an aqueous solution which is subsequently sprayed onto a heated substrate using nitrogen as the atomizing gas. At relatively low substrate temperatures (150–400°C) chemical reactions take place in which film formation of the desired compound occurs concomitantly with the release of volatile chemical reactants. The technique has advantages that include: (1) simplicity, (2) low cost and simple equipment, (3) the ability to prepare films over large areas with various shapes with relative ease and (4) the possibility of varying the physical properties through chemical means in known ways at modest temperatures. Results on the preparation of CuInSe2 which is a defect dominated semiconductor of technological interest are presented. Both n- and p- type materials were prepared with resistivities varying from 10−2 – 104 ohm-cm illustrating the use of the control of solution chemistry to produce films with reproducibly controlled properties.


1988 ◽  
Vol 17 (3) ◽  
pp. 76-78
Author(s):  
Ramakuru N. Prasad ◽  
Abayankar Neelima ◽  
R. N. Karekar
Keyword(s):  

2021 ◽  
Vol 733 ◽  
pp. 138816
Author(s):  
Juan I. Larruquert ◽  
Luis V. Rodríguez-de Marcos

2020 ◽  
Vol 18 (10) ◽  
pp. 776-779
Author(s):  
L. Castañeda

In this paper a new sensing configuration with enhanced sensitivity utilizing 2D materials on the bimetallic layers of Magnetic Material Ni over Ag for Kretschmann configuration is proposed and analyzed numerically using Fresnel equation and transfer matrix method. Results show that such a hybrid configuration with well optimized thickness of metallic layer and utilization of specific no. of 2D materials can increases the sensitivity as high as 298°/RIU is absorbed for the configuration consist 10 nm of Ni over 40 nm thickness of Ag added with a 2 layers of WSe2.


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