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Comparison of direct tunneling in Metal-GaN Schottky junctions using different k⃗ · p⃗ models for the complex bandstructure
2012 International Conference on Emerging Electronics
◽
10.1109/icemelec.2012.6636234
◽
2012
◽
Author(s):
Bharath Daka
◽
Arvind Ajoy
◽
Shreepad Karmalkar
Keyword(s):
Direct Tunneling
◽
Schottky Junctions
Download Full-text
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On the reduction of direct tunneling leakage through ultrathin gate oxides by a one-dimensional Schrödinger–Poisson solver
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Electronic Properties of Short Polynucleotides Studied Using Schottky Junctions
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Electrically tunable large magnetoresistance in graphene/silicon Schottky junctions
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A hybrid method for calorimetry with subnanoliter samples using Schottky junctions
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Schottky Junctions
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Direct tunneling stress-induced leakage current in NMOS devices with ultrathin gate oxides
2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual.
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P. Samanta
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Tsz Yin Man
◽
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◽
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◽
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◽
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Leakage Current
◽
Gate Oxides
◽
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◽
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Study of direct tunneling current oscillations in ultrathin gate dielectrics
Journal of Applied Physics
◽
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◽
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◽
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◽
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Direct Tunneling Current
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