1998 3rd International Symposium on Plasma Process-Induced Damage (Cat. No.98EX100)
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Toward charging free plasma processes: phase space modeling between pulsed plasma and microtrench

1998 3rd International Symposium on Plasma Process-Induced Damage (Cat. No.98EX100) ◽

10.1109/ppid.1998.725598 ◽

2002 ◽

Author(s):

T. Makabe ◽

J. Matsui ◽

M. Shibata ◽

N. Nakano

Keyword(s):

Phase Space ◽

Pulsed Plasma ◽

Space Modeling ◽

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Responses of electron shading consistently indicating low-energy ion effect [ICP etching]

1998 3rd International Symposium on Plasma Process-Induced Damage (Cat. No.98EX100) ◽

10.1109/ppid.1998.725604 ◽

2002 ◽

Author(s):

K. Hashimoto ◽

A. Hasegawa ◽

F. Shimpuku ◽

M. Nakamura

Keyword(s):

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Study of direct-tunneling gate oxides for CMOS applications

1998 3rd International Symposium on Plasma Process-Induced Damage (Cat. No.98EX100) ◽

10.1109/ppid.1998.725567 ◽

2002 ◽

Author(s):

H.S. Momose ◽

S.-I. Nakamura ◽

Y. Katsumata ◽

H. Iwai

Keyword(s):

Gate Oxides ◽

Direct Tunneling

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Tunnel oxide degradation mechanism in flash devices for via etching process

1998 3rd International Symposium on Plasma Process-Induced Damage (Cat. No.98EX100) ◽

10.1109/ppid.1998.725588 ◽

2002 ◽

Author(s):

M. Takebuchi ◽

K. Isobe ◽

T. Nishimura ◽

M. Kanda ◽

A. Kimitsuka

Keyword(s):

Degradation Mechanism ◽

Etching Process ◽

Oxide Degradation

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Rapid detection of charging damage with non-contact electrical analysis

1998 3rd International Symposium on Plasma Process-Induced Damage (Cat. No.98EX100) ◽

10.1109/ppid.1998.725595 ◽

2002 ◽

Author(s):

G.S. Horner ◽

I.J. Gupta

Keyword(s):

Rapid Detection ◽

Electrical Analysis

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The future trend of VLSI technology and business

1998 3rd International Symposium on Plasma Process-Induced Damage (Cat. No.98EX100) ◽

10.1109/ppid.1998.725560 ◽

2002 ◽

Author(s):

H. Sasaki

Keyword(s):

Future Trend ◽

Vlsi Technology ◽

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Charging damage in thin gate-oxides-better or worse?

1998 3rd International Symposium on Plasma Process-Induced Damage (Cat. No.98EX100) ◽

10.1109/ppid.1998.725568 ◽

2002 ◽

Author(s):

K.P. Cheung ◽

C.-T. Liu ◽

C.-P. Chang ◽

J.I. Colonell ◽

W.-Y.-C. Lai ◽

...

Keyword(s):

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Stress mode of gate oxide charging during the MERIE and the ICP processing and its effect on the gate oxide reliability

1998 3rd International Symposium on Plasma Process-Induced Damage (Cat. No.98EX100) ◽

10.1109/ppid.1998.725611 ◽

2002 ◽

Author(s):

Y. Kosaka ◽

K. Eriguchi ◽

T. Yamada

Keyword(s):

Stress Mode ◽

Oxide Reliability

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Non-destructive prognosis method of oxide degradation: a rapid monitoring of oxide energy band changes caused by semiconductor processing

1998 3rd International Symposium on Plasma Process-Induced Damage (Cat. No.98EX100) ◽

10.1109/ppid.1998.725607 ◽

2002 ◽

Author(s):

P.K. Aum ◽

T.B. Dao

Keyword(s):

Energy Band ◽

Semiconductor Processing ◽

Oxide Degradation ◽

Rapid Monitoring ◽

Non Destructive

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Relation between product yield and plasma process induced damage

1998 3rd International Symposium on Plasma Process-Induced Damage (Cat. No.98EX100) ◽

10.1109/ppid.1998.725561 ◽

2002 ◽

Author(s):

J.-M. Luchies ◽

P. Simon ◽

F. Kuper ◽

W. Maly

Keyword(s):

Product Yield ◽

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