Study of direct tunneling current oscillations in ultrathin gate dielectrics

Journal of Applied Physics ◽

10.1063/1.1861153 ◽

2005 ◽

Vol 97 (6) ◽

pp. 064107 ◽

Author(s):

E. P. Nakhmedov ◽

C. Radehaus ◽

K. Wieczorek

Keyword(s):

Gate Dielectrics ◽

Tunneling Current ◽

Direct Tunneling ◽

Current Oscillations ◽

Direct Tunneling Current

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The effect of transition region on the direct tunneling current and Fowler–Nordheim tunneling current oscillations in ultrathin MOS structures

Microelectronics Reliability ◽

10.1016/s0026-2714(01)00247-5 ◽

2002 ◽

Vol 42 (2) ◽

pp. 175-181 ◽

Author(s):

Lingfeng Mao ◽

Heqiu Zhang ◽

Changhua Tan ◽

Mingzhen Xu

Keyword(s):

Transition Region ◽

Tunneling Current ◽

Direct Tunneling ◽

Current Oscillations ◽

Direct Tunneling Current ◽

Mos Structures ◽

Nordheim Tunneling

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Direct tunneling current model for MOS devices with ultra-thin gate oxide including quantization effect and polysilicon depletion effect

Solid State Communications ◽

10.1016/s0038-1098(02)00719-6 ◽

2003 ◽

Vol 125 (3-4) ◽

pp. 219-223 ◽

Author(s):

Xiaoyan Liu ◽

Jinfeng Kang ◽

Ruqi Han

Keyword(s):

Current Model ◽

Tunneling Current ◽

Quantization Effect ◽

Direct Tunneling ◽

Mos Devices ◽

Depletion Effect ◽

Direct Tunneling Current ◽

Thin Gate Oxide

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Modeling and estimation of edge direct tunneling current for nanoscale metal gate (Hf/AlNx) symmetric double gate MOSFET

Microelectronics Journal ◽

10.1016/j.mejo.2011.02.008 ◽

2011 ◽

Vol 42 (5) ◽

pp. 688-692 ◽

Author(s):

S.K. Vishvakarma ◽

V. Komal Kumar ◽

A.K. Saxena ◽

S. Dasgupta

Keyword(s):

Tunneling Current ◽

Double Gate ◽

Direct Tunneling ◽

Double Gate Mosfet ◽

Direct Tunneling Current

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Analysis of PD SOI pMOSFET Device Performance Enhancement due to Direct-Tunneling Current in the Partial n+ Poly Gate

ECS Transactions ◽

10.1149/1.2728856 ◽

2019 ◽

Vol 6 (4) ◽

pp. 165-170 ◽

Author(s):

Georges Guegan ◽

Jeremy Pretet ◽

Romain Gwoziecki ◽

Olivier Gonnard ◽

Gilles Gouget ◽

...

Keyword(s):

Performance Enhancement ◽

Tunneling Current ◽

Device Performance ◽

Direct Tunneling ◽

Direct Tunneling Current

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Numerical Simulation for Direct Tunneling Current in Poly-Si-Gate MOS Capacitors

Journal of Computational Electronics ◽

10.1007/s10825-004-7092-3 ◽

2004 ◽

Vol 3 (3-4) ◽

pp. 439-442 ◽

Author(s):

M. Okamoto ◽

N. Mori

Keyword(s):

Numerical Simulation ◽

Tunneling Current ◽

Mos Capacitors ◽

Direct Tunneling ◽

Direct Tunneling Current

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Characterization of oxide charge trapping in ultrathin N2O oxide using direct tunneling current

Solid-State Electronics ◽

10.1016/j.sse.2005.11.005 ◽

2006 ◽

Vol 50 (2) ◽

pp. 170-176 ◽

Author(s):

H. Wong ◽

C.K. Wong ◽

Y. Fu ◽

J.J. Liou

Keyword(s):

Tunneling Current ◽

Charge Trapping ◽

Oxide Charge ◽

Direct Tunneling ◽

Direct Tunneling Current

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New floating-body effect in partially depleted SOI pMOSFET due to direct-tunneling current in the partial n+ poly gate

Solid-State Electronics ◽

10.1016/j.sse.2009.02.011 ◽

2009 ◽

Vol 53 (7) ◽

pp. 741-745

Author(s):

Georges Guegan ◽

R. Gwoziecki ◽

P. Touret ◽

C. Raynaud ◽

J. Pretet ◽

...

Keyword(s):

Tunneling Current ◽

Floating Body ◽

Body Effect ◽

Direct Tunneling ◽

Floating Body Effect ◽

Direct Tunneling Current

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Modeling study of ultrathin gate oxides using direct tunneling current and capacitance-voltage measurements in MOS devices

IEEE Transactions on Electron Devices ◽

10.1109/16.772492 ◽

1999 ◽

Vol 46 (7) ◽

pp. 1464-1471 ◽

Author(s):

N. Yang ◽

W.K. Henson ◽

J.R. Hauser ◽

J.J. Wortman

Keyword(s):

Tunneling Current ◽

Gate Oxides ◽

Direct Tunneling ◽

Mos Devices ◽

Capacitance Voltage ◽

Direct Tunneling Current ◽

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Measurement of Channel Stress Using Gate Direct Tunneling Current in Uniaxially Stressed nMOSFETs

IEEE Electron Device Letters ◽

10.1109/led.2007.902985 ◽

2007 ◽

Vol 28 (9) ◽

pp. 818-820 ◽

Author(s):

Chen-Yu Hsieh ◽

Ming-Jer Chen

Keyword(s):

Tunneling Current ◽

Direct Tunneling ◽

Direct Tunneling Current

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A physical model for hole direct tunneling current in p/sup +/ poly-gate pMOSFETs with ultrathin gate oxides

IEEE Transactions on Electron Devices ◽

10.1109/16.877179 ◽

2000 ◽

Vol 47 (11) ◽

pp. 2161-2166 ◽

Author(s):

Kuo-Nan Yang ◽

Huan-Tsung Huang ◽

Ming-Chin Chang ◽

Che-Min Chu ◽

Yuh-Shu Chen ◽

...

Keyword(s):

Physical Model ◽

Tunneling Current ◽

Gate Oxides ◽

Direct Tunneling ◽

Direct Tunneling Current

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