Study of direct-tunneling gate oxides for CMOS applications

1998 3rd International Symposium on Plasma Process-Induced Damage (Cat. No.98EX100) ◽

10.1109/ppid.1998.725567 ◽

2002 ◽

Author(s):

H.S. Momose ◽

S.-I. Nakamura ◽

Y. Katsumata ◽

H. Iwai

Keyword(s):

Gate Oxides ◽

Direct Tunneling

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On the reduction of direct tunneling leakage through ultrathin gate oxides by a one-dimensional Schrödinger–Poisson solver

Journal of Applied Physics ◽

10.1063/1.373477 ◽

2000 ◽

Vol 87 (11) ◽

pp. 7931-7939 ◽

Author(s):

Eric Cassan

Keyword(s):

Gate Oxides ◽

One Dimensional ◽

Direct Tunneling ◽

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Direct tunneling stress-induced leakage current in NMOS devices with ultrathin gate oxides

2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. ◽

10.1109/relphy.2005.1493159 ◽

2005 ◽

Author(s):

P. Samanta ◽

Tsz Yin Man ◽

A.C.K. Chan ◽

Qingchun Zhang ◽

Chunxiang Zhu ◽

...

Keyword(s):

Leakage Current ◽

Gate Oxides ◽

Direct Tunneling ◽

Stress Induced Leakage Current

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Modeling study of ultrathin gate oxides using direct tunneling current and capacitance-voltage measurements in MOS devices

IEEE Transactions on Electron Devices ◽

10.1109/16.772492 ◽

1999 ◽

Vol 46 (7) ◽

pp. 1464-1471 ◽

Author(s):

N. Yang ◽

W.K. Henson ◽

J.R. Hauser ◽

J.J. Wortman

Keyword(s):

Tunneling Current ◽

Gate Oxides ◽

Direct Tunneling ◽

Mos Devices ◽

Capacitance Voltage ◽

Direct Tunneling Current ◽

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A physical model for hole direct tunneling current in p/sup +/ poly-gate pMOSFETs with ultrathin gate oxides

IEEE Transactions on Electron Devices ◽

10.1109/16.877179 ◽

2000 ◽

Vol 47 (11) ◽

pp. 2161-2166 ◽

Author(s):

Kuo-Nan Yang ◽

Huan-Tsung Huang ◽

Ming-Chin Chang ◽

Che-Min Chu ◽

Yuh-Shu Chen ◽

...

Keyword(s):

Physical Model ◽

Tunneling Current ◽

Gate Oxides ◽

Direct Tunneling ◽

Direct Tunneling Current

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Performance and reliability of sub-100 nm MOSFETs with ultra thin direct tunneling gate oxides

1998 Symposium on VLSI Technology Digest of Technical Papers (Cat. No.98CH36216) ◽

10.1109/vlsit.1998.689240 ◽

2002 ◽

Author(s):

Qi Xiang ◽

G. Yeap ◽

D. Bang ◽

Miryeong Song ◽

K. Ahmed ◽

...

Keyword(s):

Gate Oxides ◽

Direct Tunneling

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Analysis of electron direct tunneling current through very-thin gate oxides in MOS capacitors with the parallel-perpendicular kinetic energy components and anisotropic masses

Brazilian Journal of Physics ◽

10.1590/s0103-97332010000400008 ◽

2010 ◽

Vol 40 (4) ◽

pp. 404-407 ◽

Author(s):

Fatimah Arofiati Noor ◽

Mikrajuddin Abdullah ◽

Sukirno ◽

Khairurrijal

Keyword(s):

Kinetic Energy ◽

Tunneling Current ◽

Gate Oxides ◽

Mos Capacitors ◽

Direct Tunneling ◽

Direct Tunneling Current ◽

Energy Components

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Polyreoxidation process step for suppressing edge direct tunneling through ultrathin gate oxides in NMOSFETs

Solid-State Electronics ◽

10.1016/s0038-1101(02)00252-6 ◽

2003 ◽

Vol 47 (1) ◽

pp. 15-17 ◽

Author(s):

Kingsuk Maitra ◽

Navakanta Bhat

Keyword(s):

Gate Oxides ◽

Process Step ◽

Direct Tunneling

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Effect of boron neutralization on interface state creation after direct tunneling injections at 100 °C in 2,3-nm ultrathin gate oxides

Applied Physics Letters ◽

10.1063/1.1598291 ◽

2003 ◽

Vol 83 (5) ◽

pp. 926-927 ◽

Author(s):

D. Zander ◽

J. Boch ◽

F. Saigné ◽

A. Meinertzhagen ◽

O. Simonetti

Keyword(s):

Interface State ◽

Gate Oxides ◽

Direct Tunneling ◽

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Experimental examination of physical model for direct tunneling current in unstressed/stressed ultrathin gate oxides

International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318) ◽

10.1109/iedm.1999.824193 ◽

2003 ◽

Author(s):

S. Takagi ◽

M. Takayanagi ◽

A. Toriumi

Keyword(s):

Physical Model ◽

Tunneling Current ◽

Experimental Examination ◽

Gate Oxides ◽

Direct Tunneling ◽

Direct Tunneling Current

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Influence of direct-tunneling gate current on negative bias temperature instability in ultra-thin gate oxides

2005 International Conference on Integrated Circuit Design and Technology, 2005. ICICDT 2005. ◽

10.1109/icicdt.2005.1502613 ◽

2005 ◽

Author(s):

Y. Mitani ◽

H. Satake

Keyword(s):

Negative Bias ◽

Negative Bias Temperature Instability ◽

Gate Oxides ◽

Temperature Instability ◽

Gate Current ◽

Direct Tunneling ◽

Bias Temperature Instability

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