High-temperature effects on device performance of a junctionless transistor

Author(s):  
Ratul Kumar Baruah ◽  
Roy P. Paily
2004 ◽  
Vol 39 (7) ◽  
pp. 615-623 ◽  
Author(s):  
Rafael Vasconcelos Ribeiro ◽  
Mauro Guida dos Santos ◽  
Gustavo Maia Souza ◽  
Eduardo Caruso Machado ◽  
Ricardo Ferraz de Oliveira ◽  
...  

Photosynthetic responses to daily environmental changes were studied in bean (Phaseolus vulgaris L.) genotypes 'Carioca', 'Ouro Negro', and Guarumbé. Light response curves of CO2 assimilation and stomatal conductance (g s) were also evaluated under controlled (optimum) environmental condition. Under this condition, CO2 assimilation of 'Carioca' was not saturated at 2,000 µmol m-2 s-1, whereas Guarumbé and 'Ouro Negro' exhibited different levels of light saturation. All genotypes showed dynamic photoinhibition and reversible increase in the minimum chlorophyll fluorescence yield under natural condition, as well as lower photosynthetic capacity when compared with optimum environmental condition. Since differences in g s were not observed between natural and controlled conditions for Guarumbé and 'Ouro Negro', the lower photosynthetic capacity of these genotypes under natural condition seems to be caused by high temperature effects on biochemical reactions, as suggested by increased alternative electron sinks. The highest g s values of 'Carioca' were observed at controlled condition, providing evidences that reduction of photosynthetic capacity at natural condition was due to low g s in addition to the high temperature effects on the photosynthetic apparatus. 'Carioca' exhibited the highest photosynthetic rates under optimum environmental condition, and was more affected by daily changes of air temperature and leaf-to-air vapor pressure difference.


2004 ◽  
Vol 63 (1) ◽  
pp. 209-213 ◽  
Author(s):  
A. DEYNEKA ◽  
Z. HUBICKA ◽  
M. CADA ◽  
G. SUCHANECK ◽  
M. SAVINOV ◽  
...  

1986 ◽  
Vol 4 (8) ◽  
pp. 1151-1156 ◽  
Author(s):  
T. Shiota ◽  
H. Hidaka ◽  
O. Fukuda ◽  
K. Inada

2013 ◽  
Vol 1538 ◽  
pp. 3-8
Author(s):  
Dominik M. Berg ◽  
Christopher P. Thompson ◽  
William N. Shafarman

ABSTRACTThe influence of higher processing temperatures on the formation reaction of Cu(In,Ga)(Se,S)2 thin films using a three step reactive annealing process and on the device performance has been investigated. High process temperatures generally lead to the formation of larger grains, decrease the amount of void formation and their distribution at the back Mo/Cu(In,Ga)(Se,S)2 interface, and lead to a much faster formation reaction that shortens the overall reaction process. However, high temperature processing also leads to a decrease in device performance. A loss in open circuit voltage and fill factor could be attributed to enhanced interface recombination processes for the samples fabricated at higher process temperatures, which itself may be caused by a lack of Na and subsequent poor passivation of interface defect states. The lack of Na resulted in a decrease in free charge carrier concentration by two orders of magnitude.


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