Magnetic and dielectric properties of Sm-doped M-type barium ferrites for LTCC application

Author(s):  
Ximeng Yu ◽  
Sheng Li ◽  
Jie Li ◽  
Daming Chen ◽  
Yan Yang ◽  
...  
2018 ◽  
Vol 23 (4) ◽  
pp. 536-540
Author(s):  
Shuai Wang ◽  
Jie Li ◽  
Yiheng Rao ◽  
Yan Yang ◽  
Gongwen Gan ◽  
...  

2015 ◽  
Vol 241 ◽  
pp. 226-236 ◽  
Author(s):  
Neha Solanki ◽  
Rajshree B. Jotania

Influence of Ca substitution on structural, magnetic and dielectric properties of Ba3Co2-xCaxFe24O41(where x = 0.0, 0.2, 0.4, 0.6, 0.8 and 1.0), prepared by Sol-Gel auto-combustion method, has been investigated in present studies. The obtained powder was sintered at 950 oC for 4 hrs. in the static air atmosphere. Structural analysis of Ca-doped Ba3Co2-xCaxFe24O41powders revealed pure Z-type hexaferrite phase at low temperature. The frequency dependent dielectric constant (Єʹ) and magnetic properties such as remanent magnetization (Mr), saturation magnetization (Ms) and coercivity (Hc) were studied. It is observed that coercivity increased gradually with increase in calcium content. The real dielectric constant (Єʹ) and dielectric loss tangent (tan δ) were studied in the frequency range of 20Hz to 2MHz. The dielectric parameters for all samples show normal dielectric behavior as observed in hexaferrites. Contents of Paper


2007 ◽  
Vol 350 ◽  
pp. 221-224
Author(s):  
Takeshi Yokota ◽  
Takaaki Kuribayashi ◽  
Takeshi Shundo ◽  
Keita Hattori ◽  
Yasutoshi Sakakibara ◽  
...  

We investigated the magnetic and dielectric properties of a metal (Pt)/insulator (Cr2O3)/semiconductor (Si) (MIS) capacitor composed of magneto-electric (ME) materials. The capacitor has anti-ferromagnetic properties and a very small electrically induced magnetic moment. It also shows capacitance-voltage (C-V) properties typical of a Si-MIS capacitor without any hysteresis. By inserting a thin Cr2O3-x layer, the C-V curve has a hysteresis window with a clockwise trace, which indicates that electrons have been injected into the Cr2O3-x layer. These results indicate that this MIS capacitor contains a floating gate and an ME insulating layer in a single system.


2016 ◽  
Vol 90 (8) ◽  
pp. 869-880 ◽  
Author(s):  
S. Anjum ◽  
H. Nazli ◽  
R. Khurram ◽  
Talat Zeeshan ◽  
S. Riaz ◽  
...  

2016 ◽  
Vol 42 (2) ◽  
pp. 2806-2812 ◽  
Author(s):  
Fida Rehman ◽  
Hai-Bo Jin ◽  
Changlei Niu ◽  
Arfan Bukhtiar ◽  
Yong-Jie Zhao ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document