Magnetic and Dielectric Properties of a Metal/ Cr2O3/Cr2O3-x/Cr2O3/Semiconductor Capacitor Using Magneto-Electric Materials

We investigated the magnetic and dielectric properties of a metal (Pt)/insulator (Cr2O3)/semiconductor (Si) (MIS) capacitor composed of magneto-electric (ME) materials. The capacitor has anti-ferromagnetic properties and a very small electrically induced magnetic moment. It also shows capacitance-voltage (C-V) properties typical of a Si-MIS capacitor without any hysteresis. By inserting a thin Cr2O3-x layer, the C-V curve has a hysteresis window with a clockwise trace, which indicates that electrons have been injected into the Cr2O3-x layer. These results indicate that this MIS capacitor contains a floating gate and an ME insulating layer in a single system.

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Magnetic and Dielectric Properties of a Metal/ Cr2O3/Cr2O3-x/Cr2O3/Semiconductor Capacitor Using Magneto-Electric Materials

Electroceramics in Japan X - Key Engineering Materials ◽

10.4028/0-87849-449-9.221 ◽

2007 ◽

pp. 221-224

Author(s):

Takeshi Yokota ◽

Takaaki Kuribayashi ◽

Takeshi Shundo ◽

Keita Hattori ◽

Yasutoshi Sakakibara ◽

...

Keyword(s):

Dielectric Properties ◽

Magnetic And Dielectric Properties ◽

Electric Materials

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Investigation of Magnetic and Dielectric Properties of Cobalt Cubic Spinel Ferrite Nanoparticles Synthesized by CTAB-Assisted Co-precipitation Method

Journal of Superconductivity and Novel Magnetism ◽

10.1007/s10948-021-05869-z ◽

2021 ◽

Author(s):

Mobeen Haneef ◽

Iftikhar H. Gul ◽

Majid Hussain ◽

Ibrar Hassan

Keyword(s):

Dielectric Properties ◽

Spinel Ferrite ◽

Ferrite Nanoparticles ◽

Precipitation Method ◽

Magnetic And Dielectric Properties ◽

Co Precipitation

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Microstructure, magnetic, and dielectric properties of Co–Zr co-doped hexagonal barium ferrites based on the sintering temperature and doping concentration

Journal of Materials Science Materials in Electronics ◽

10.1007/s10854-020-04761-1 ◽

2021 ◽

Vol 32 (3) ◽

pp. 2685-2695

Author(s):

Hongbo Zhang ◽

Lining Fan ◽

Hechun Cao ◽

Yishi Yu ◽

Tianchi Zhang ◽

...

Keyword(s):

Dielectric Properties ◽

Doping Concentration ◽

Sintering Temperature ◽

Barium Ferrites ◽

Magnetic And Dielectric Properties ◽

Co Doped

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Influence of Ca-Doping on Structural, Magnetic and Dielectric Properties of Ba3Co2-xCaxFe24O41 Hexaferrite Powders

Solid State Phenomena ◽

10.4028/www.scientific.net/ssp.241.226 ◽

2015 ◽

Vol 241 ◽

pp. 226-236 ◽

Cited By ~ 3

Author(s):

Neha Solanki ◽

Rajshree B. Jotania

Keyword(s):

Dielectric Constant ◽

Dielectric Properties ◽

Sol Gel ◽

Calcium Content ◽

Combustion Method ◽

Dielectric Behavior ◽

Dielectric Parameters ◽

Ca Doping ◽

Auto Combustion ◽

Magnetic And Dielectric Properties

Influence of Ca substitution on structural, magnetic and dielectric properties of Ba3Co2-xCaxFe24O41(where x = 0.0, 0.2, 0.4, 0.6, 0.8 and 1.0), prepared by Sol-Gel auto-combustion method, has been investigated in present studies. The obtained powder was sintered at 950 oC for 4 hrs. in the static air atmosphere. Structural analysis of Ca-doped Ba3Co2-xCaxFe24O41powders revealed pure Z-type hexaferrite phase at low temperature. The frequency dependent dielectric constant (Єʹ) and magnetic properties such as remanent magnetization (Mr), saturation magnetization (Ms) and coercivity (Hc) were studied. It is observed that coercivity increased gradually with increase in calcium content. The real dielectric constant (Єʹ) and dielectric loss tangent (tan δ) were studied in the frequency range of 20Hz to 2MHz. The dielectric parameters for all samples show normal dielectric behavior as observed in hexaferrites. Contents of Paper

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A New Method For The Electronic And Chemical Passivation Of GaAs Surfaces Using CS2

MRS Proceedings ◽

10.1557/proc-406-529 ◽

1995 ◽

Vol 406 ◽

Author(s):

Ju-Hyung Lee ◽

Yanzhen Xu ◽

Veronica A. Burrows ◽

Paul F. McMillan

Keyword(s):

Surface Passivation ◽

Passivation Layer ◽

Semiconductor Diode ◽

Photoluminescence Intensity ◽

Atmospheric Conditions ◽

Metal Insulator ◽

Insulating Layer ◽

Capacitance Voltage ◽

Chemical Passivation ◽

Homogeneous Film

AbstractA new GaAs surface passivation method, CS2 treatment at moderate temperature was developed for effective passivation of GaAs surfaces. The CS2 treatment of GaAs surfaces at 350°C and 10 atm leads to deposition of a homogeneous film, with a thickness of several hundred Å. The passivation layer thus produced causes a significant enhancement in room temperature photoluminescence intensity and the passivation effect of the sulfide film was confirmed by Raman spectroscopy. The passivation layer remained electrically and chemically stable over a period of nine months under ambient atmospheric conditions. In-depth Auger electron spectroscopy (AES) revealed that the carbon and oxygen content in the film was negligible, whereas sulfur was uniformly distributed throughout the film. A metal-insulator-semiconductor diode whose insulating layer is produced by the CS2 treatment shows well-defined accumulation and depletion regions in its capacitance-voltage (CV) characteristics with low hysteresis.

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