A 28Gbaud/s 4Vpp PAM4 MZ Modulator Driver in 0.13\mu \mathrm{m}$ SiGe BiCMOS Technology

2020 ◽  
Author(s):  
Lulu Li ◽  
Yingmei Chen ◽  
En Zhu
Keyword(s):  
Bicmos Technology ◽  
Sige Bicmos ◽  
Modulator Driver

DESIGN CONSIDERATIONS FOR INTEGRATED MODULATOR DRIVERS IN SILICON GERMANIUM TECHNOLOGY

2005 ◽  
Vol 15 (03) ◽  
pp. 477-495 ◽  
Author(s):  
SHANTHI PAVAN ◽  
MAURICE TARSIA ◽  
STEFFEN KUDSZUS ◽  
DAVID PRITZKAU
Keyword(s):  
Power Supply ◽  
Silicon Germanium ◽  
High Speed ◽  
Design Considerations ◽  
Trade Offs ◽  
Bicmos Technology ◽  
Sige Bicmos ◽  
Present Design ◽  
Simulation Results ◽  
Modulator Driver

We present design considerations for high speed high swing differential modulator drivers in SiGe BiCMOS technology. Trade-offs between lumped and distributed designs, and linear and limiting amplifiers are examined. The design of a 6 V output modulator driver is discussed in detail. The driver features a unique bias generation and distribution circuit that enables low power-supply operation. Simulation results and measurements are given.

Operation of Current Mirrors in SiGe BiCMOS Technology at Cryogenic Temperatures

2021 ◽  
Vol 68 (4) ◽  
pp. 1439-1445
Author(s):  
Hanbin Ying ◽  
Jeffrey W. Teng ◽  
John D. Cressler
Keyword(s):  
Cryogenic Temperatures ◽  
Current Mirrors ◽  
Bicmos Technology ◽  
Sige Bicmos

Total Dose and Transient Response of SiGe HBTs from a New 4th-Generation, 90 nm SiGe BiCMOS Technology

2012 ◽  
Author(s):  
Nelson E. Lourenco ◽  
Robert L. Schmid ◽  
Kurt A. Moen ◽  
Stanley D. Phillips ◽  
Troy D. England ◽  
...  
Keyword(s):  
Total Dose ◽  
Transient Response ◽  
Bicmos Technology ◽  
Sige Bicmos
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