A 1.8~3.1 GHz High-Gain LNA with 1.5~1.7 dB NF in 0.18-μm SiGe BiCMOS Technology

This paper presents the design and measurement results of a high-gain D-band broadband power amplifier (PA) implemented in a 130 nm SiGe BiCMOS technology. The topology of the PA is based on four differential cascode stages with interstage matching networks. A detailed analysis of the frequency behavior of the transimpedance-gain of the common-base stage of the cascode is presented by means of small-signal equivalent circuits, when the proposed four-reactance wideband matching network is used for output matching to the subsequent stage. The effect of the size of the active devices, in achieving a desired gain, bandwidth, and output power, is investigated. The fabricated D-band amplifier is characterized on-wafer demonstrating a peak differential gain and output power of about 25 dB and 11 dBm, respectively, while utilizing a DC power of 262 mW from a 2.7 V supply. The 3-dB small-signal bandwidth of the PA spans from 100 to 180 GHz (limited by the measurement setup), making it the first SiGe-based PA to cover the entire D-band frequency range. The PA achieves a state-of-the-art differential gain-bandwidth product of around 1.4 THz and the highest GBW/PDCratio of 5.2 GHz/mW among all D-Band Si-based PAs.

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A high-gain high-linearity distributed amplifier for ultra-wideband-applications using a low cost SiGe BiCMOS technology

2009 IEEE 10th Annual Wireless and Microwave Technology Conference ◽

10.1109/wamicon.2009.5207301 ◽

2009 ◽

Cited By ~ 1

Author(s):

Benjamin Sewiolo ◽

Dietmar Kissinger ◽

Georg Fischer ◽

Robert Weigel

Keyword(s):

Low Cost ◽

High Gain ◽

Ultra Wideband ◽

Distributed Amplifier ◽

High Linearity ◽

Bicmos Technology ◽

Sige Bicmos

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J-band amplifier design using gain-enhanced cascodes in 0.13 μm SiGe

International Journal of Microwave and Wireless Technologies ◽

10.1017/s175907871500080x ◽

2015 ◽

Vol 7 (3-4) ◽

pp. 339-347 ◽

Cited By ~ 2

Author(s):

Stefan Malz ◽

Bernd Heinemann ◽

Rudolf Lachner ◽

Ullrich R. Pfeiffer

Keyword(s):

Noise Figure ◽

High Gain ◽

Low Noise ◽

Small Signal ◽

Sige Hbt ◽

Bicmos Technology ◽

Signal Amplifier ◽

Sige Bicmos ◽

Amplifier Design ◽

Noise Amplifier

This paper presents two J-band amplifiers in different 0.13 μm SiGe technologies: a small signal amplifier (SSA) in a technology in which never before gain has been shown over 200 GHz; and a low noise amplifier (LNA) design for 230 GHz applications in an advanced SiGe HBT technology with higher fT/fmax, demonstrating the combination of high gain, low noise, and low power in a single amplifier. Both circuits consist of a four-stage pseudo-differential cascode topology. By employing series–series feedback at the single-stage level the small-signal gain is increased, enabling circuit operation at high-frequencies and with improved efficiency, while maintaining unconditional stability. The SSA was fabricated in a SiGe BiCMOS technology by Infineon with fT/fmax values of 250/360 GHz. It has measured 19.5 dB gain at 212 GHz with a 3 dB bandwidth of 21 GHz. It draws 65 mA from a 3.3 V supply. On the other hand, a LNA was designed in a SiGe BiCMOS technology by IHP with fT/fmaxof 300/450 GHz. The LNA has measured 22.5 dB gain at 233 GHz with a 3 dB bandwidth of 10 GHz and a simulated noise figure of 12.5 dB. The LNA draws only 17 mA from a 4 V supply. The design methodology, which led to these record results, is described in detail with the LNA as an example.

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