Terahertz emission from InAs and InSb under a 1.55 µm Laser Excitation

Author(s):  
Christopher T. Que ◽  
Hidekazu Nakajima ◽  
Masahiko Tani
2018 ◽  
Vol 648 ◽  
pp. 46-49 ◽  
Author(s):  
Cyril P. Sadia ◽  
Lorenzo P. Lopez ◽  
Ramon M. delos Santos ◽  
Joselito E. Muldera ◽  
Alexander E. De Los Reyes ◽  
...  

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Kankan Cong ◽  
Eric Vetter ◽  
Liang Yan ◽  
Yi Li ◽  
Qi Zhang ◽  
...  

AbstractNext-generation terahertz (THz) sources demand lightweight, low-cost, defect-tolerant, and robust components with synergistic, tunable capabilities. However, a paucity of materials systems simultaneously possessing these desirable attributes and functionalities has made device realization difficult. Here we report the observation of asymmetric spintronic-THz radiation in Two-Dimensional Hybrid Metal Halides (2D-HMH) interfaced with a ferromagnetic metal, produced by ultrafast spin current under femtosecond laser excitation. The generated THz radiation exhibits an asymmetric intensity toward forward and backward emission direction whose directionality can be mutually controlled by the direction of applied magnetic field and linear polarization of the laser pulse. Our work demonstrates the capability for the coherent control of THz emission from 2D-HMHs, enabling their promising applications on the ultrafast timescale as solution-processed material candidates for future THz emitters.


2020 ◽  
Vol 59 (10) ◽  
pp. 105004
Author(s):  
Yoshihiko Saiwai ◽  
Takanari Kashiwagi ◽  
Kurama Nakade ◽  
Manabu Tsujimoto ◽  
Hidetoshi Minami ◽  
...  

1997 ◽  
Vol 481 ◽  
Author(s):  
J. P. Callan ◽  
A. M.-T. Kim ◽  
L. Huangt ◽  
E. N. Glezer ◽  
E. Mazur

ABSTRACTWe use a new broadband spectroscopic technique to measure ultrafast changes in the dielectric function of a material over the spectral range 1.5–3.5 eV following intense 70-fs laser excitation. The results reveal the nature of the phase transformations which occur in the material following excitation. We studied the response of GaAs and Si. For GaAs, there are three distinct regimes of behavior as the pump fluence is increased — lattice heating, lattice disordering, and a semiconductor-to-metal transition.


2004 ◽  
Vol 70 (23) ◽  
Author(s):  
J. Lloyd-Hughes ◽  
E. Castro-Camus ◽  
M. Fraser ◽  
C. Jagadish ◽  
M. Johnston

ACS Photonics ◽  
2021 ◽  
Vol 8 (2) ◽  
pp. 550-556
Author(s):  
Javier Hernandez-Rueda ◽  
Marc L. Noordam ◽  
Irina Komen ◽  
L. Kuipers

2021 ◽  
pp. 138572
Author(s):  
Jing Guo ◽  
Ye-Jun Li ◽  
Jun-Ping Ma ◽  
Xian Tang ◽  
Xue-Shen Liu

Sign in / Sign up

Export Citation Format

Share Document