HBT ICs FOR OC-192 EQUIPMENT

1998 ◽  
Vol 09 (02) ◽  
pp. 549-566
Author(s):  
JOHN SITCH ◽  
ROBERT SURRIDGE
Keyword(s):  
Integrated Circuits ◽  
High Speed ◽  
New Technology ◽  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Small Scale ◽  
Commercial Market ◽  
Fiber Communications

Heterojunction bipolar transistor (HBT) integrated circuits are just beginning to appear on the commercial market, mostly as small-scale microwave and broadband parts. The high-speed portion of Nortel's OC-192 fiber communications product makes extensive use of this new technology, and this article describes the rationale for using HBT ICs in such a system, and the philosophy behind HBT IC introduction.

Microfabrication research at the National Submicron Facility

1983 ◽  
Vol 41 ◽  
pp. 86-89
Author(s):  
E.D. Wolf
Keyword(s):  
Integrated Circuits ◽  
Particle Physics ◽  
High Speed ◽  
New Technology ◽  
High Energy ◽  
High Energy Particle ◽  
New Science ◽  
Wide Range ◽  
Intermediate Domain ◽  
Circuit Function

Most microelectronics devices and circuits operate faster, consume less power, execute more functions and cost less per circuit function when the feature-sizes internal to the devices and circuits are made smaller. This is part of the stimulus for the Very High-Speed Integrated Circuits (VHSIC) program. There is also a need for smaller, more sensitive sensors in a wide range of disciplines that includes electrochemistry, neurophysiology and ultra-high pressure solid state research. There is often fundamental new science (and sometimes new technology) to be revealed (and used) when a basic parameter such as size is extended to new dimensions, as is evident at the two extremes of smallness and largeness, high energy particle physics and cosmology, respectively. However, there is also a very important intermediate domain of size that spans from the diameter of a small cluster of atoms up to near one micrometer which may also have just as profound effects on society as “big” physics.

BALLISTIC COLLECTION TRANSISTORS AND THEIR APPLICATIONS

1994 ◽  
Vol 05 (03) ◽  
pp. 349-379 ◽  
Author(s):  
T. ISHIBASHI ◽  
Y. YAMAUCHI ◽  
E. SANO ◽  
H. NAKAJIMA ◽  
Y. MATSUOKA
Keyword(s):  
Integrated Circuits ◽  
High Speed ◽  
Monte Carlo Analysis ◽  
Heterojunction Bipolar Transistor ◽  
Doping Profile ◽  
Electron Velocity ◽  
Collector Current ◽  
Microwave Characterization ◽  
Current Densities ◽  
Dynamic Frequency

We describe the design, fabrication and application of ballistic collection transistors (BCTs) in which electron velocity overshoot is introduced in the collector of a GaAs-based heterojunction bipolar transistor. The guideline for the BCT design is the effective confinement of electrons to the Γ-valley, as simulated by Monte Carlo analysis, and the control of electron energy is accomplished basically with an i-p+-n+ doping profile. Microwave characterization demonstrates the existence of significant overshoot and cutoff frequencies higher than 100 GHz at collector current densities in the mid 104 A/cm 2 range for a typical BCT structure. Some high speed integrated circuits implemented with BCTs include a selector circuit that operates at bit rates up to 40 Gb/s, a dynamic frequency divider with divide-by-four function up to 50 GHz and a broadband preamplifier having an S21 bandwidth as high as 40 GHz.

HIGH SPEED DIGITAL CIRCUIT TECHNOLOGY

1995 ◽  
Vol 06 (01) ◽  
pp. 163-210 ◽  
Author(s):  
STEPHEN I. LONG
Keyword(s):  
Integrated Circuits ◽  
Low Power ◽  
Material Properties ◽  
High Speed ◽  
Digital Circuit ◽  
Bipolar Transistor ◽  
Clock Frequency ◽  
Digital Integrated Circuits ◽  
Heterojunction Devices ◽  
Circuit Technology

The performance of high speed digital integrated circuits, defined here as those requiring operation at high clock frequency, is generally more sensitive to material properties and process techniques than ICs used at lower frequencies. Obtaining high speed and low power concurrently is especially challenging. Circuit architectures must be selected for the device and application appropriately. This paper presents simple models for high speed digital IC performance and applies these to the FET and bipolar transistor. Heterojunction devices are compared with those using single or binary materials. Circuits for high speed SSI and low power VLSI applications are described, and their performance is surveyed.

High-speed InP/lnGaAs heterojunction bipolar transistor utilizing nonalloyed contacts on n+-InP contacting layers

1996 ◽  
Vol 25 (10) ◽  
pp. 1637-1639
Author(s):  
M. T. Fresina ◽  
D. A. Ahmaki ◽  
S. Thomas ◽  
D. W. Barlage ◽  
C. A. Martino ◽  
...  
Keyword(s):  
High Speed ◽  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor
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