Self-assembled InAsSb quantum dots grown on GaAs substrates by molecular-beam epitaxy

2005 ◽  
Author(s):  
M. Kudo ◽  
T. Nakaoka ◽  
S. Iwamoto ◽  
Y. Arakawa
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Gaas Substrates ◽  
Self Assembled

Growth of self-assembled InAs quantum dots on Si exposed GaAs substrates by molecular beam epitaxy

2003 ◽  
Author(s):  
N. Saucedo-Zeni ◽  
L. Zamora-Peredo ◽  
A.Yu. Gorbatchev ◽  
A. Lastras-Martinez ◽  
C.I. Medel-Ruiz ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Inas Quantum Dots ◽  
Gaas Substrates ◽  
Self Assembled

InAs self-assembled quantum dots grown on an InP (311)B substrate by molecular beam epitaxy

2001 ◽  
Vol 89 (7) ◽  
pp. 4186-4188 ◽  
Author(s):  
Y. F. Li ◽  
J. Z. Wang ◽  
X. L. Ye ◽  
B. Xu ◽  
F. Q. Liu ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Self Assembled

InAs self‐assembled quantum dots on InP by molecular beam epitaxy

1996 ◽  
Vol 68 (7) ◽  
pp. 991-993 ◽  
Author(s):  
S. Fafard ◽  
Z. Wasilewski ◽  
J. McCaffrey ◽  
S. Raymond ◽  
S. Charbonneau
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Self Assembled

Growth of InAs quantum dots on vicinal GaAs substrates by molecular beam epitaxy

2016 ◽  
Vol 451 ◽  
pp. 79-82
Author(s):  
Nicholas Weir ◽  
Ruizhe Yao ◽  
Chi-Sen Lee ◽  
Wei Guo
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Inas Quantum Dots ◽  
Gaas Substrates

Self-assembled zinc blende GaN quantum dots grown by molecular-beam epitaxy

2000 ◽  
Vol 77 (6) ◽  
pp. 809-811 ◽  
Author(s):  
E. Martinez-Guerrero ◽  
C. Adelmann ◽  
F. Chabuel ◽  
J. Simon ◽  
N. T. Pelekanos ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Zinc Blende ◽  
Self Assembled

Fabrication of CdTe Quantum Dot Arrays on GaAs utilizng Nanoporous Alumina Masks

2004 ◽  
Vol 818 ◽  
Author(s):  
Mi Jung ◽  
Hong Seok Lee ◽  
Hong Lee Park ◽  
Sun-Il Mho
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Dot ◽  
Gaas Substrate ◽  
Molecular Beam ◽  
Pore Density ◽  
Nanoporous Alumina ◽  
Gaas Substrates ◽  
Cdte Qds ◽  
Self Assembled ◽  
Cdte Quantum Dot

AbstractThe uniformity and reproducibility of the CdTe QD arrays on the GaAs substrates can be improved by using a nanoporous mask. The CdTe QDs on the GaAs substrate were grown by a molecular beam epitaxy (MBE) method. The nanoporous alumina masks used for the fabrication of QD arrays have the thickness from 0.3 νm to 5 νm with the nanochannels of ∼ 80 nm diameter and the pore density of ∼ 1010cm−2. When the thickness of the alumina mask used for the CdTe QD growth was about 300 nm, the CdTe QD arrays formed as a replica of the nanochannels of the mask. Smaller self-assembled CdTe QDs located randomly were produced by using the thicker nanochannel mask than 0.5 νm. The thickness of the nanochannel mask controls the size of the CdTe/GaAs QDs.

Selective Formation of Self-Organized InAs Quantum Dots Grown on Patterned GaAs Substrates by Molecular Beam Epitaxy

2006 ◽  
Vol 45 (4B) ◽  
pp. 3556-3559 ◽  
Author(s):  
Akio Ueta ◽  
Kouichi Akahane ◽  
Shin-ichioro Gozu ◽  
Naokatsu Yamamoto ◽  
Naoki Ohtani
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Inas Quantum Dots ◽  
Self Organized ◽  
Gaas Substrates ◽  
Selective Formation
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