Molecular Beam Epitaxy of Self-assembled InAs Quantum Dots on (001) and (113)B GaAs Substrates under a Slow Growth Rate Condition

2008 ◽  
Author(s):  
T. Takahashi ◽  
T. Mukai ◽  
K. Morita ◽  
T. Kitada ◽  
T. Isu
Keyword(s):  
Growth Rate ◽  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Slow Growth ◽  
Rate Condition ◽  
Inas Quantum Dots ◽  
Slow Growth Rate ◽  
Gaas Substrates ◽  
Self Assembled

Growth of self-assembled InAs quantum dots on Si exposed GaAs substrates by molecular beam epitaxy

2003 ◽  
Author(s):  
N. Saucedo-Zeni ◽  
L. Zamora-Peredo ◽  
A.Yu. Gorbatchev ◽  
A. Lastras-Martinez ◽  
C.I. Medel-Ruiz ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Inas Quantum Dots ◽  
Gaas Substrates ◽  
Self Assembled

Growth of InAs quantum dots on vicinal GaAs substrates by molecular beam epitaxy

2016 ◽  
Vol 451 ◽  
pp. 79-82
Author(s):  
Nicholas Weir ◽  
Ruizhe Yao ◽  
Chi-Sen Lee ◽  
Wei Guo
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Inas Quantum Dots ◽  
Gaas Substrates

Growth Kinetics and Formation of Uniform Self-Assembled InAs/GaAs Quantum Dots at

2007 ◽  
Vol 124-126 ◽  
pp. 539-542
Author(s):  
Eui Tae Kim ◽  
Anupam Madhukar
Keyword(s):  
Growth Rate ◽  
Quantum Dots ◽  
Growth Kinetics ◽  
Slow Growth ◽  
Fast Growth ◽  
Slow Growth Rate ◽  
Self Assembled ◽  
Kinetics Of ◽  
Fast Growth Rate ◽  
2D To 3D

We discuss the growth kinetics of InAs/GaAs self-assembled quantum dots (QDs) using two different InAs deposition rates, relatively fast growth rate of 0.22 ML/sec and slow growth rate of 0.054 ML/sec. With increasing InAs deposition amount to 3.0 ML, the QD density was almost constant after 2D to 3D island transition at the slow deposition rate while the QD density kept increasing and the QD size distribution was relatively broad at the fast growth rate. After the 2D to 3D transition, at the slow growth rate, further deposited In adatoms seemed to incorporate primarily into already formed islands, and thus contribute to equalize island size. The photoluminescence (PL) full-width at half maximum (FWHM) of 2.5 ML InAs QDs at 0.054 ML/sec was 23 meV at 78K. The PL characteristics of InAs/GaAs QDs were degraded significantly after thermal annealing at 550 oC for 3 hours.

Selective Formation of Self-Organized InAs Quantum Dots Grown on Patterned GaAs Substrates by Molecular Beam Epitaxy

2006 ◽  
Vol 45 (4B) ◽  
pp. 3556-3559 ◽  
Author(s):  
Akio Ueta ◽  
Kouichi Akahane ◽  
Shin-ichioro Gozu ◽  
Naokatsu Yamamoto ◽  
Naoki Ohtani
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Inas Quantum Dots ◽  
Self Organized ◽  
Gaas Substrates ◽  
Selective Formation

Molecular-beam epitaxy of self-assembled InAs quantum dots on non-(1 0 0) oriented GaAs

1997 ◽  
Vol 175-176 ◽  
pp. 765-770 ◽  
Author(s):  
P.P. González-Borrero ◽  
E. Marega ◽  
D.I. Lubyshev ◽  
E. Petitprez ◽  
P. Basmaji
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Inas Quantum Dots ◽  
Self Assembled

Low density of self-assembled InAs quantum dots grown by solid-source molecular beam epitaxy on InP(001)

2006 ◽  
Vol 89 (12) ◽  
pp. 123112 ◽  
Author(s):  
E. Dupuy ◽  
P. Regreny ◽  
Y. Robach ◽  
M. Gendry ◽  
N. Chauvin ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Low Density ◽  
Inas Quantum Dots ◽  
Self Assembled
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