Selective Formation of Self-Organized InAs Quantum Dots Grown on Patterned GaAs Substrates by Molecular Beam Epitaxy

2006 ◽  
Vol 45 (4B) ◽  
pp. 3556-3559 ◽  
Author(s):  
Akio Ueta ◽  
Kouichi Akahane ◽  
Shin-ichioro Gozu ◽  
Naokatsu Yamamoto ◽  
Naoki Ohtani
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Inas Quantum Dots ◽  
Self Organized ◽  
Gaas Substrates ◽  
Selective Formation

Formation of Ultra-low Density (≤104cm-2) Self-Organized InAs Quantum Dots on GaAs by a Modified Molecular Beam Epitaxy Method

2008 ◽  
Vol 1 ◽  
pp. 061202 ◽  
Author(s):  
Masato Ohmori ◽  
Takuya Kawazu ◽  
Kousuke Torii ◽  
Takuji Takahashi ◽  
Hiroyuki Sakaki
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Low Density ◽  
Inas Quantum Dots ◽  
Self Organized ◽  
Molecular Beam Epitaxy Method

Growth of InAs quantum dots on vicinal GaAs substrates by molecular beam epitaxy

2016 ◽  
Vol 451 ◽  
pp. 79-82
Author(s):  
Nicholas Weir ◽  
Ruizhe Yao ◽  
Chi-Sen Lee ◽  
Wei Guo
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Inas Quantum Dots ◽  
Gaas Substrates

Selective Formation of Self-Organized InAs QDs on Patterned GaAs Substrates by Molecular Beam Epitaxy

2005 ◽  
Author(s):  
Akio Ueta ◽  
Kouichi Akahane ◽  
Sinichiro Gozu ◽  
Naokatsu Yamamoto ◽  
Naoki Ohtani
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Self Organized ◽  
Gaas Substrates ◽  
Selective Formation

Improvement of self-organized InAs quantum dots growth by molecular beam epitaxy

2005 ◽  
Vol 276 (1-2) ◽  
pp. 72-76 ◽  
Author(s):  
Z.L. Miao ◽  
S.J. Chua ◽  
Y.H. Chye ◽  
P. Chen ◽  
S. Tripathy
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Inas Quantum Dots ◽  
Self Organized

Growth of self-assembled InAs quantum dots on Si exposed GaAs substrates by molecular beam epitaxy

2003 ◽  
Author(s):  
N. Saucedo-Zeni ◽  
L. Zamora-Peredo ◽  
A.Yu. Gorbatchev ◽  
A. Lastras-Martinez ◽  
C.I. Medel-Ruiz ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Inas Quantum Dots ◽  
Gaas Substrates ◽  
Self Assembled

Enhanced Photoluminescence from Long Wavelength InAs Quantum Dots Embedded in a Graded (In,Ga)As Quantum Well

2001 ◽  
Vol 692 ◽  
Author(s):  
L. Chen ◽  
V. G. Stoleru ◽  
D. Pal ◽  
D. Pan ◽  
E. Towe
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Composition Profile ◽  
Inas Quantum Dots ◽  
Long Wavelength ◽  
Enhanced Photoluminescence ◽  
Self Organized ◽  
Ingaas Quantum Well

AbstractThree sets of self-organized InAs quantum dots (QDs) embedded in an external InGaAs quantum well samples were grown by solid source molecular beam epitaxy (MBE). By modifying Indium composition profile within quantum well (QW) region, it's found the photoluminescence emission from quantum dots can be greatly enhanced when employing a graded quantum well to surround QDs. This quantum dots in a graded quantum well structure also preserves the long wavelength (1.3 μm) spectrum requirement for the future use in optoelectronics devices.

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