The recently discovered yttrium oxyfluoride (YOF) coating has been found to be a highly promising plasma-resistant material which can be coated onto the inner wall of the dry etching chambers used in the manufacturing of the three-dimensional stacking circuits of semiconductors, such as vertical NAND flash memory. Here, the coating behavior of the YOF coating which was deposited by suspension plasma spraying was investigated using a high-output coaxial feeding method. Both the deposition rate and density of YOF coatings increased with the plasma power, which was determined by the gas ratio of Ar/H2/N2 and the arc current. The coating thicknesses were 58 ± 3.4, 25.8 ± 2.1, 5.6 ± 0.6, and 0.93 ± 0.4 µm at plasma powers of 112, 83, 67, and 59 kW, respectively, for 20 scans with a feeding rate of the suspension at 0.045 standard liters per minute (slm). The porosities were 0.15% ± 0.01%, 0.25% ± 0.01%, and 5.50% ± 0.40% at corresponding plasma powers of 112, 83, and 67 kW. High-resolution X-ray diffraction (HRXRD) shows that the major and minor peaks of the coatings which were deposited at 112 kW stem from trigonal YOF and cubic Y2O3, respectively. Increasing the flow rate of the atomizing gas from 15 slm to 30 slm decreased the porosity of the YOF coating from 0.22% ± 0.03% to 0.07% ± 0.03%. The Vickers hardness of the YOF coating containing some Y2O3 deposited at 112 kW was 550 ± 70 HV.
Three-dimensional Structures of Plasma and Fluid Flow in a Nonequilibrium Disk MHD Generator with Inlet Swirl
