Threshold voltage control of copper phthalocyanine based organic field-effect transistors with a poly (N-vinylcarbazole) buffer layer

2010 ◽  
Author(s):  
Ying Wang ◽  
Yunqi Liu ◽  
Yabin Song ◽  
Chong-an Di ◽  
Yanming Sun ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Threshold Voltage ◽  
Field Effect ◽  
Copper Phthalocyanine ◽  
Field Effect Transistors ◽  
Voltage Control ◽  
Organic Field Effect Transistors

Modulation Doping for Threshold Voltage Control in Organic Field-Effect Transistors

2021 ◽  
Vol 13 (7) ◽  
pp. 8664-8671
Author(s):  
Ilia Lashkov ◽  
Kevin Krechan ◽  
Katrin Ortstein ◽  
Felix Talnack ◽  
Shu-Jen Wang ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Voltage Control ◽  
Organic Field Effect Transistors ◽  
Modulation Doping

Organic Field Effect Transistors Having Hundreds of Nanometers Long Channels

2008 ◽  
Vol 1091 ◽  
Author(s):  
Liwei Shang ◽  
Ming Liu ◽  
Deyu Tu ◽  
Lijuan Zhen ◽  
Ge Liu ◽  
...  
Keyword(s):  
Grain Size ◽  
Threshold Voltage ◽  
Field Effect ◽  
Copper Phthalocyanine ◽  
Field Effect Transistors ◽  
Semiconductor Materials ◽  
Device Performance ◽  
Organic Field Effect Transistors ◽  
Insulator Layer ◽  
Abrupt Changes

AbstractThis work studied systemically the device characteristics when the OFETs' channels turn into hundreds of nm. Standard planar OFETs have been fabricated using electronic beam lithography. Copper phthalocyanine is used as the semiconductor materials. When reduce the L to about 300 nm will lead an abrupt degradation of device performance. The ratio of Ion/Ioff turns from several hundreds into couple of tens. And when change the L to about 100 nm, the mobility turns from 10−2 cm2/Vs into 10m5 cm2/Vs, and the threshold voltage turns from about 12 V into 36 V. These abrupt changes are due to the changes of interface between active layer and insulator layer caused by the reducing the L to close to the grain size.

Organic Field-Effect Transistors with a Low Pinch-Off Voltage and a Controllable Threshold Voltage

2008 ◽  
Vol 20 (3) ◽  
pp. 611-615 ◽  
Author(s):  
Y. Wang ◽  
Y. Q. Liu ◽  
Y. B. Song ◽  
S. H. Ye ◽  
W. P. Wu ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors
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