Threshold-voltage control and enhancement-mode characteristics in multilayer tin disulfide field-effect transistors by gate-oxide passivation with an alkylphosphonic acid self-assembled monolayer

2015 ◽  
Vol 117 (10) ◽  
pp. 104509 ◽  
Author(s):  
Ute Zschieschang ◽  
Tanja Holzmann ◽  
Alexander Kuhn ◽  
Mahdieh Aghamohammadi ◽  
Bettina V. Lotsch ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Voltage Control ◽  
Gate Oxide ◽  
Self Assembled Monolayer ◽  
Enhancement Mode ◽  
Tin Disulfide ◽  
Mode Characteristics ◽  
Alkylphosphonic Acid

Self-Assembled Dipoles of o-Carborane on Gate Oxide Tuning Charge Carriers in Organic Field Effect Transistors

2021 ◽  
Author(s):  
Ming Chu ◽  
Jie Zhang ◽  
Xingwei Zeng ◽  
Zefeng Chen ◽  
Danqing Liu ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Gate Oxide ◽  
Charge Carriers ◽  
Acid Form ◽  
Organic Field Effect Transistors ◽  
Self Assembled Monolayer ◽  
Self Assembled

Molecules of 12-o-carboranyldodecylphosphonic acid form a novel self-assembled monolayer (SAM) on alumina, which can effectively tune charge carriers in organic field effect transistors (OFETs) with the assembled dipoles of o−carborane...

Controlling the threshold voltage of β-Ga2O3 field-effect transistors via remote fluorine plasma treatment

2019 ◽  
Vol 7 (29) ◽  
pp. 8855-8860 ◽  
Author(s):  
Janghyuk Kim ◽  
Marko J. Tadjer ◽  
Michael A. Mastro ◽  
Jihyun Kim
Keyword(s):  
Plasma Treatment ◽  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Double Gate ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Enhancement Mode ◽  
Mode Operation

The threshold voltage of β-Ga2O3 metal–insulator–semiconductor field-effect transistors is controlled via remote fluorine plasma treatment, enabling an enhancement-mode operation under double gate condition.

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