Modulation Doping for Threshold Voltage Control in Organic Field-Effect Transistors

2021 ◽  
Vol 13 (7) ◽  
pp. 8664-8671
Author(s):  
Ilia Lashkov ◽  
Kevin Krechan ◽  
Katrin Ortstein ◽  
Felix Talnack ◽  
Shu-Jen Wang ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Voltage Control ◽  
Organic Field Effect Transistors ◽  
Modulation Doping

Organic Field-Effect Transistors with a Low Pinch-Off Voltage and a Controllable Threshold Voltage

2008 ◽  
Vol 20 (3) ◽  
pp. 611-615 ◽  
Author(s):  
Y. Wang ◽  
Y. Q. Liu ◽  
Y. B. Song ◽  
S. H. Ye ◽  
W. P. Wu ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors

Degradation of organic field-effect transistors made of pentacene

2004 ◽  
Vol 19 (7) ◽  
pp. 1999-2002 ◽  
Author(s):  
Ch. Pannemann ◽  
T. Diekmann ◽  
U. Hilleringmann
Keyword(s):  
Charge Carrier ◽  
Threshold Voltage ◽  
Field Effect ◽  
Gate Dielectric ◽  
Field Effect Transistors ◽  
Ambient Air ◽  
Organic Field Effect Transistors ◽  
Organic Thin Film ◽  
Field Effect Mobility ◽  
Semiconducting Material

This article reports degradation experiments on organic thin film transistors using the small organic molecule pentacene as the semiconducting material. Starting with degradation inert p-type silicon wafers as the substrate and SiO2 as the gate dielectric, we show the influence of temperature and exposure to ambient air on the charge carrier field-effect mobility, on-off-ratio, and threshold-voltage. The devices were found to have unambiguously degraded over 3 orders of magnitude in maximum on-current and charge carrier field-effect mobility, but they still operated after a period of 9 months in ambient air conditions. A thermal treatment was carried out in vacuum conditions and revealed a degradation of the charge carrier field-effect mobility, maximum on-current, and threshold voltage.

Sign in / Sign up

Export Citation Format

Share Document