Experimental determination of mobility scattering mechanisms in Si/HfO/sub 2//TiN and SiGe:C/HfO/sub 2//TiN surface channel n- and p-MOSFETs
1998 ◽
Vol 103
(1)
◽
pp. 225-235
◽
1979 ◽
Vol 40
(C7)
◽
pp. C7-709-C7-710
Keyword(s):
2010 ◽
Vol 130
(10)
◽
pp. 1817-1818
Keyword(s):