Work as a team or individual: Characterizing the system-level impacts of main memory partitioning

Author(s):  
Eojin Lee ◽  
Jongwook Chung ◽  
Daejin Jung ◽  
Sukhan Lee ◽  
Sheng Li ◽  
...  
Keyword(s):  
2022 ◽  
Vol 21 (1) ◽  
pp. 1-25
Author(s):  
Kazi Asifuzzaman ◽  
Rommel Sánchez Verdejo ◽  
Petar Radojković

It is questionable whether DRAM will continue to scale and will meet the needs of next-generation systems. Therefore, significant effort is invested in research and development of novel memory technologies. One of the candidates for next-generation memory is Spin-Transfer Torque Magnetic Random Access Memory (STT-MRAM). STT-MRAM is an emerging non-volatile memory with a lot of potential that could be exploited for various requirements of different computing systems. Being a novel technology, STT-MRAM devices are already approaching DRAM in terms of capacity, frequency, and device size. Although STT-MRAM technology got significant attention of various major memory manufacturers, academic research of STT-MRAM main memory remains marginal. This is mainly due to the unavailability of publicly available detailed timing and current parameters of this novel technology, which are required to perform a reliable main memory simulation on performance and power estimation. This study demonstrates an approach to perform a cycle accurate simulation of STT-MRAM main memory, being the first to release detailed timing and current parameters of this technology from academia—essentially enabling researchers to conduct reliable system-level simulation of STT-MRAM using widely accepted existing simulation infrastructure. The results show a fairly narrow overall performance deviation in response to significant variations in key timing parameters, and the power consumption experiments identify the key power component that is mostly affected with STT-MRAM.


2021 ◽  
Vol 11 (4) ◽  
pp. 36
Author(s):  
Mohammad Nasim Imtiaz Khan ◽  
Swaroop Ghosh

Several promising non-volatile memories (NVMs) such as magnetic RAM (MRAM), spin-transfer torque RAM (STTRAM), ferroelectric RAM (FeRAM), resistive RAM (RRAM), and phase-change memory (PCM) are being investigated to keep the static leakage within a tolerable limit. These new technologies offer high density and consume zero leakage power and can bridge the gap between processor and memory. The desirable properties of emerging NVMs make them suitable candidates for several applications including replacement of conventional memories. However, their unique characteristics introduce new data privacy and security issues. Some of them are already available in the market as discrete chips or a part of full system implementation. They are considered to become ubiquitous in future computing devices. Therefore, it is important to ensure their security/privacy issues. Note that these NVMs can be considered for cache, main memory, or storage application. They are also suitable to implement in-memory computation which increases system throughput and eliminates von Neumann bottleneck. Compute-capable NVMs impose new security and privacy challenges that are fundamentally different than their storage counterpart. This work identifies NVM vulnerabilities and attack vectors originating from the device level all the way to circuits and systems, considering both storage and compute applications. We also summarize the circuit/system-level countermeasures to make the NVMs robust against security and privacy issues.


2014 ◽  
Vol 45 (2) ◽  
pp. 211-216 ◽  
Author(s):  
Taciano Perez ◽  
Ney Laert Vilar Calazans ◽  
César A.F. De Rose

1998 ◽  
Author(s):  
Martin P. Charns ◽  
Victoria A. Parker ◽  
William H. Wubbenhorst
Keyword(s):  

2018 ◽  
Vol 4 (3) ◽  
pp. 228-244 ◽  
Author(s):  
Ivan J. Raymond ◽  
Matthew Iasiello ◽  
Aaron Jarden ◽  
David Michael Kelly
Keyword(s):  

2007 ◽  
Vol 51 (1-2) ◽  
pp. 43
Author(s):  
Balázs Polgár ◽  
Endre Selényi
Keyword(s):  

1997 ◽  
Vol 473 ◽  
Author(s):  
J. A. Davis ◽  
J. D. Meindl

ABSTRACTOpportunities for Gigascale Integration (GSI) are governed by a hierarchy of physical limits. The levels of this hierarchy have been codified as: 1) fundamental, 2) material, 3) device, 4) circuit and 5) system. Many key limits at all levels of the hierarchy can be displayed in the power, P, versus delay, td, plane and the reciprocal length squared, L-2, versus response time, τ, plane. Power, P, is the average power transfer during a binary switching transition and delay, td, is the time required for the transition. Length, L, is the distance traversed by an interconnect that joins two nodes on a chip and response time, τ, characterizes the corresponding interconnect circuit. At the system level of the hierarchy, quantitative definition of both the P versus td and the L-2 versus τ displays requires an estimate of the complete stochastic wiring distribution of a chip.Based on Rent's Rule, a well known empirical relationship between the number of signal input/output terminals on a block of logic and the number of gate circuits with the block, a rigorous derivation of a new complete stochastic wire length distribution for an on-chip random logic network is described. This distribution is compared to actual data for modern microprocessors and to previously described distributions. A methodology for estimating the complete wire length distribution for future GSI products is proposed. The new distribution is then used to enhance the critical path model that determines the maximum clock frequency of a chip; to derive a preliminary power dissipation model for a random logic network; and, to define an optimal architecture of a multilevel interconnect network that minimizes overall chip size. In essence, a new complete stochastic wiring distribution provides a generic basis for maximizing the value obtained from a multilevel interconnect technology.


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