Comparative analysis of parameters of deep levels in the ion implanted layers and fast electron-irradiated structures

2000 International Conference on Ion Implantation Technology Proceedings. Ion Implantation Technology - 2000 (Cat. No.00EX432) ◽

10.1109/iit.2000.924107 ◽

2003 ◽

Author(s):

S.Y. Yurchuk ◽

G.I. Kol'tsov ◽

S.I. Didenko

Keyword(s):

Comparative Analysis ◽

Fast Electron ◽

Deep Levels ◽

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Deep Levels in Ion Implanted GaAs (Gallium Arsenide)

10.21236/ada177072 ◽

1986 ◽

Author(s):

Harry B. Dietrich ◽

R. Magno

Keyword(s):

Gallium Arsenide ◽

Deep Levels ◽

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THE PRESENCE OF DEEP LEVELS IN ION IMPLANTED JUNCTIONS

Applied Physics Letters ◽

10.1063/1.1652619 ◽

1968 ◽

Vol 13 (9) ◽

pp. 295-297 ◽

Author(s):

R. G. Hunsperger ◽

O. J. Marsh ◽

C. A. Mead

Keyword(s):

Deep Levels ◽

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Deep levels in ion implanted field effect transistors on SiC

2001 International Semiconductor Device Research Symposium. Symposium Proceedings (Cat. No.01EX497) ◽

10.1109/isdrs.2001.984429 ◽

2002 ◽

Author(s):

S. Mitra ◽

M.V. Rao ◽

K. Jones ◽

X.W. Wang ◽

N. Papanicolaou ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Deep Levels ◽

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A Review of Deep Levels in Donor-Ion Implanted GaAs

Solid State Phenomena ◽

10.4028/www.scientific.net/ssp.1-2.211 ◽

1991 ◽

Vol 1-2 ◽

pp. 211-245 ◽

Author(s):

D.W.E. Allsopp

Keyword(s):

Deep Levels ◽

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Deep levels in ion implanted n-type homoepitaxial GaN: Ion mass, tilt angle and dose dependence

Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ◽

10.1016/j.nimb.2020.12.010 ◽

2021 ◽

Vol 490 ◽

pp. 39-42

Author(s):

G. Alfieri ◽

V.K. Sundaramoorthy ◽

R. Micheletto

Keyword(s):

Dose Dependence ◽

Deep Levels ◽

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The nature of damage-related deep levels in29Si+-ion-implanted GaAs annealed using pulses of intense incoherent light

Semiconductor Science and Technology ◽

10.1088/0268-1242/2/3/001 ◽

1987 ◽

Vol 2 (3) ◽

pp. 129-135 ◽

Author(s):

D Allsopp

Keyword(s):

Deep Levels ◽

Incoherent Light ◽

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Characterization of deep levels using unconventional zero-bias thermally stimulated current in ion-implanted semi-insulating GaAs substrates

IEEE Transactions on Electron Devices ◽

10.1109/t-ed.1985.22303 ◽

1985 ◽

Vol 32 (11) ◽

pp. 2506-2508 ◽

Author(s):

D.K. Chen ◽

M.B. Das

Keyword(s):

Deep Levels ◽

Thermally Stimulated Current ◽

Zero Bias ◽

Gaas Substrates ◽

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Deep levels in ion‐implanted Si after beam annealing

Applied Physics Letters ◽

10.1063/1.92928 ◽

1982 ◽

Vol 40 (1) ◽

pp. 68-71 ◽

Author(s):

N. H. Sheng ◽

M. Mizuta ◽

J. L. Merz

Keyword(s):

Deep Levels ◽

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Deep levels subsisting in ion implanted silicon after various transient thermal annealing procedures

Applied Physics A Solids and Surface ◽

10.1007/bf00624720 ◽

1983 ◽

Vol 31 (3) ◽

pp. 147-152 ◽

Author(s):

A. Mesli ◽

J. C. Muller ◽

P. Siffert

Keyword(s):

Thermal Annealing ◽

Deep Levels ◽

Transient Thermal ◽

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VIA-5 deep levels in ion-implanted Si after beam annealing

IEEE Transactions on Electron Devices ◽

10.1109/t-ed.1981.20586 ◽

1981 ◽

Vol 28 (10) ◽

pp. 1256-1256

Author(s):

N.H. Sheng ◽

M. Mizuta ◽

J.L. Merz

Keyword(s):

Deep Levels ◽

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