Proximity Gettering Design of Silicon Wafers Using Hydrocarbon Molecular Ion Implantation Technique for Advanced CMOS Image Sensors

2018 ◽  
Author(s):  
Kazunari Kurita ◽  
Takeshi Kadono ◽  
Satoshi Shigematsu ◽  
Ryo Hirose ◽  
Ryosuke Okuyama ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Image Sensors ◽  
Silicon Wafers ◽  
Implantation Technique ◽  
Molecular Ion ◽  
Cmos Image Sensors

Silicon Wafer Gettering Design for Advanced CMOS Image Sensors Using Hydrocarbon Molecular Ion Implantation: A review

2021 ◽  
Author(s):  
Kazunari Kurita ◽  
Takeshi Kadono ◽  
Ryosuke Okuyama ◽  
Ayumi Onaka-Masada ◽  
Satoshi Shigematsu ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Silicon Wafer ◽  
Image Sensors ◽  
Molecular Ion ◽  
Cmos Image Sensors

scholarly journals Proximity Gettering Design of Hydrocarbon–Molecular–Ion–Implanted Silicon Wafers Using Dark Current Spectroscopy for CMOS Image Sensors

Sensors ◽  
2019 ◽  
Vol 19 (9) ◽  
pp. 2073 ◽  
Author(s):  
Kazunari Kurita ◽  
Takeshi Kadono ◽  
Satoshi Shigematsu ◽  
Ryo Hirose ◽  
Ryosuke Okuyama ◽  
...  
Keyword(s):  
Dark Current ◽  
Image Sensor ◽  
Image Sensors ◽  
Silicon Wafers ◽  
Device Fabrication ◽  
Oxide Semiconductor ◽  
Device Performance ◽  
Molecular Ion ◽  
Cmos Image Sensors ◽  
Ion Implanted

We developed silicon epitaxial wafers with high gettering capability by using hydrocarbon–molecular–ion implantation. These wafers also have the effect of hydrogen passivation on process-induced defects and a barrier to out-diffusion of oxygen of the Czochralski silicon (CZ) substrate bulk during Complementary metal-oxide-semiconductor (CMOS) device fabrication processes. We evaluated the electrical device performance of CMOS image sensor fabricated on this type of wafer by using dark current spectroscopy. We found fewer white spot defects compared with those of intrinsic gettering (IG) silicon wafers. We believe that these hydrocarbon–molecular–ion–implanted silicon epitaxial wafers will improve the device performance of CMOS image sensors.

Proximity gettering technology for advanced CMOS image sensors using carbon cluster ion‐implantation technique: A review

2017 ◽  
Vol 214 (7) ◽  
pp. 1700216 ◽  
Author(s):  
Kazunari Kurita ◽  
Takeshi Kadono ◽  
Ryousuke Okuyama ◽  
Satoshi Shigemastu ◽  
Ryo Hirose ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Carbon Cluster ◽  
Image Sensors ◽  
Implantation Technique ◽  
Cmos Image Sensors ◽  
Cluster Ion

scholarly journals Hydrogen diffusion behavior in CH2P-molecular-ion-implanted silicon wafers for CMOS image sensors

2022 ◽  
Vol 137 ◽  
pp. 106211
Author(s):  
Ryosuke Okuyama ◽  
Takeshi Kadono ◽  
Ayumi Onaka-Masada ◽  
Akihiro Suzuki ◽  
Koji Kobayashi ◽  
...  
Keyword(s):  
Hydrogen Diffusion ◽  
Image Sensors ◽  
Silicon Wafers ◽  
Diffusion Behavior ◽  
Molecular Ion ◽  
Cmos Image Sensors ◽  
Ion Implanted

scholarly journals A Review of Proximity Gettering Technology for CMOS Image Sensors Using Hydrocarbon Molecular Ion Implantation

2019 ◽  
Vol 31 (6) ◽  
pp. 1939 ◽  
Author(s):  
Kazunari Kurita ◽  
Takeshi Kadono ◽  
Ryousuke Okuyama ◽  
Satoshi Shigematsu ◽  
Ryo Hirose ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Image Sensors ◽  
Molecular Ion ◽  
Cmos Image Sensors

scholarly journals Proximity gettering technology for advanced CMOS image sensors using carbon cluster ion‐implantation technique: A review (Phys. Status Solidi A 7∕2017)

2017 ◽  
Vol 214 (7) ◽  
pp. 1770141
Author(s):  
Kazunari Kurita ◽  
Takeshi Kadono ◽  
Ryousuke Okuyama ◽  
Satoshi Shigemastu ◽  
Ryo Hirose ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Carbon Cluster ◽  
Image Sensors ◽  
Implantation Technique ◽  
Cmos Image Sensors ◽  
Cluster Ion

scholarly journals Proximity gettering design of silicon wafers using silicon hydride and hydrocarbon mixture molecular ion implantation technique

2021 ◽  
Vol 135 ◽  
pp. 106063
Author(s):  
Ryo Hirose ◽  
Takeshi Kadono ◽  
Ayumi Onaka-Masada ◽  
Ryosuke Okuyama ◽  
Koji Kobayashi ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Silicon Wafers ◽  
Implantation Technique ◽  
Hydrocarbon Mixture ◽  
Silicon Hydride ◽  
Molecular Ion

scholarly journals Proximity gettering of silicon wafers using CH3O multielement molecular ion implantation technique

2018 ◽  
Vol 57 (9) ◽  
pp. 096503 ◽  
Author(s):  
Ryo Hirose ◽  
Takeshi Kadono ◽  
Ryosuke Okuyama ◽  
Satoshi Shigematsu ◽  
Ayumi Onaka-Masada ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Silicon Wafers ◽  
Implantation Technique ◽  
Molecular Ion

(Invited) Proximity Gettering Design of Hydrocarbon Molecular Ion Implanted Silicon Wafers Using Direct Bonding Technique for Advanced CMOS Image Sensors: A Review

2018 ◽  
Vol 86 (5) ◽  
pp. 77-93 ◽  
Author(s):  
Kazunari Kurita ◽  
Yoshihiro Koga ◽  
Ryousuke Okuyama ◽  
Takeshi Kadono ◽  
Satoshi Shigematsu ◽  
...  
Keyword(s):  
Image Sensors ◽  
Silicon Wafers ◽  
Molecular Ion ◽  
Cmos Image Sensors ◽  
Bonding Technique ◽  
Ion Implanted
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