scholarly journals FKIMNet: A Finger Dorsal Image Matching Network Comparing Component (Major, Minor and Nail) Matching with Holistic (Finger Dorsal) Matching

Author(s):  
Daksh Thapar ◽  
Gaurav Jaswal ◽  
Aditya Nigam
2018 ◽  
Vol 10 (10) ◽  
pp. 1552 ◽  
Author(s):  
Lloyd Hughes ◽  
Michael Schmitt ◽  
Xiao Zhu

In this paper, we propose a generative framework to produce similar yet novel samples for a specified image. We then propose the use of these images as hard-negatives samples, within the framework of hard-negative mining, in order to improve the performance of classification networks in applications which suffer from sparse labelled training data. Our approach makes use of a variational autoencoder (VAE) which is trained in an adversarial manner in order to learn a latent distribution of the training data, as well as to be able to generate realistic, high quality image patches. We evaluate our proposed generative approach to hard-negative mining on a synthetic aperture radar (SAR) and optical image matching task. Using an existing SAR-optical matching network as the basis for our investigation, we compare the performance of the matching network trained using our approach to the baseline method, as well as to two other hard-negative mining methods. Our proposed generative architecture is able to generate realistic, very high resolution (VHR) SAR image patches which are almost indistinguishable from real imagery. Furthermore, using the patches as hard-negative samples, we are able to improve the overall accuracy, and significantly decrease the false positive rate of the SAR-optical matching task—thus validating our generative hard-negative mining approaches’ applicability to improve training in data sparse applications.


2021 ◽  
Author(s):  
Xiaoqi Zheng ◽  
Yingfan Tao ◽  
Ruikai Zhang ◽  
Wenming Yang ◽  
Qingmin Liao

Author(s):  
A. Olsen ◽  
J.C.H. Spence ◽  
P. Petroff

Since the point resolution of the JEOL 200CX electron microscope is up = 2.6Å it is not possible to obtain a true structure image of any of the III-V or elemental semiconductors with this machine. Since the information resolution limit set by electronic instability (1) u0 = (2/πλΔ)½ = 1.4Å for Δ = 50Å, it is however possible to obtain, by choice of focus and thickness, clear lattice images both resembling (see figure 2(b)), and not resembling, the true crystal structure (see (2) for an example of a Fourier image which is structurally incorrect). The crucial difficulty in using the information between Up and u0 is the fractional accuracy with which Af and Cs must be determined, and these accuracies Δff/4Δf = (2λu2Δf)-1 and ΔCS/CS = (λ3u4Cs)-1 (for a π/4 phase change, Δff the Fourier image period) are strongly dependent on spatial frequency u. Note that ΔCs(up)/Cs ≈ 10%, independent of CS and λ. Note also that the number n of identical high contrast spurious Fourier images within the depth of field Δz = (αu)-1 (α beam divergence) decreases with increasing high voltage, since n = 2Δz/Δff = θ/α = λu/α (θ the scattering angle). Thus image matching becomes easier in semiconductors at higher voltage because there are fewer high contrast identical images in any focal series.


2010 ◽  
Vol 22 (6) ◽  
pp. 1042-1049 ◽  
Author(s):  
Jinde Wang ◽  
Xiaoyan Li ◽  
Lidan Shou ◽  
Gang Chen

2013 ◽  
Vol 32 (11) ◽  
pp. 3157-3160
Author(s):  
Zhen-hua XUE ◽  
Ping WANG ◽  
Chu-han ZHANG ◽  
Si-jia CAI

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