This paper presents an architecture-level approach, called nonvolatile logic-in-memory (NV-LIM) architecture, to solving performance-wall and power-wall problems in the present CMOS-only-based logic-LSI (Large-Scaled Integration) processors. The use of magnetic tunnel junction devices combined with a CMOS-gate style makes it possible to achieve a high-performance and ultra-low-power logic LSI. Some concrete examples using the proposed method allow you to achieve the desired performance improvement compared to a corresponding CMOS-only-based realization.