Quantitative analysis of Si/Ge quantum structures by high-resolution transmission electron microscopy

Author(s):  
C.W. Zhao ◽  
Y.M. Xing ◽  
J.Z. Yu ◽  
G.Q. Han
1986 ◽  
Vol 77 ◽  
Author(s):  
R. Hull ◽  
K. W. Carey ◽  
G. A. Reid

ABSTRACTWe define the Interface between two dissimilar materials by two functions, g(z) and f(x,y), representing the diffuseness along the interface normal and the distribution of interface non-planarities respectively. We show how these functions may be measured for the case of epitaxial interfaces between dissimilar crystals by quantitative analysis of lattice structure images obtained by high resolution transmission electron microscopy. Experimental examples are drawn from the GeSi/Si, InGaAs/InAlAs and InGaAs/InP systems. Correlations between interface structure and optical and electronic properties of these systems are discussed.


Author(s):  
R. Gronsky

The phenomenon of clustering in Al-Ag alloys has been extensively studied since the early work of Guinierl, wherein the pre-precipitation state was characterized as an assembly of spherical, ordered, silver-rich G.P. zones. Subsequent x-ray and TEM investigations yielded results in general agreement with this model. However, serious discrepancies were later revealed by the detailed x-ray diffraction - based computer simulations of Gragg and Cohen, i.e., the silver-rich clusters were instead octahedral in shape and fully disordered, atleast below 170°C. The object of the present investigation is to examine directly the structural characteristics of G.P. zones in Al-Ag by high resolution transmission electron microscopy.


Carbon ◽  
2017 ◽  
Vol 117 ◽  
pp. 174-181 ◽  
Author(s):  
Chang’an Wang ◽  
Thomas Huddle ◽  
Chung-Hsuan Huang ◽  
Wenbo Zhu ◽  
Randy L. Vander Wal ◽  
...  

2016 ◽  
Vol 30 (20) ◽  
pp. 1650269 ◽  
Author(s):  
Thi Giang Le ◽  
Minh Tuan Dau

High-resolution transmission electron microscopy (HR-TEM) has been used to investigate the structural properties of GeMn/Ge nanocolumns multilayer samples grown on Ge(001) substrates by means of molecular beam epitaxy (MBE) system. Four bilayers with the spacer thickness in the range between 6 nm and 15 nm and 10 periods of bilayers of Ge[Formula: see text]Mn[Formula: see text]/Ge nanocolumn are presented. A simplified 2D model based on the theory of elastic constant interactions has been used to provide reasonable explanations to the vertical self-organization of GeMn nanocolumns in multilayers.


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