Theoretical and Experimental Description of Interface Structure

1986 ◽  
Vol 77 ◽  
Author(s):  
R. Hull ◽  
K. W. Carey ◽  
G. A. Reid
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Quantitative Analysis ◽  
High Resolution ◽  
Electronic Properties ◽  
Lattice Structure ◽  
Dissimilar Materials ◽  
Interface Structure ◽  
Transmission Electron ◽  
Optical And Electronic Properties

ABSTRACTWe define the Interface between two dissimilar materials by two functions, g(z) and f(x,y), representing the diffuseness along the interface normal and the distribution of interface non-planarities respectively. We show how these functions may be measured for the case of epitaxial interfaces between dissimilar crystals by quantitative analysis of lattice structure images obtained by high resolution transmission electron microscopy. Experimental examples are drawn from the GeSi/Si, InGaAs/InAlAs and InGaAs/InP systems. Correlations between interface structure and optical and electronic properties of these systems are discussed.

Interface Structure and Layer Synthesis Modes in Mesotaxial Si/CoSi2/Si Structures

1990 ◽  
Vol 183 ◽  
Author(s):  
R. Hull ◽  
Y. F. Hsieh ◽  
K. T. Short ◽  
A. E. White ◽  
D. Cherns
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Lattice Parameter ◽  
Interface Structure ◽  
Interfacial Structure ◽  
Parameter Mismatch ◽  
Alternative Method ◽  
Transmission Electron

AbstractWe report observations of interfacial structure and consequences for layer synthesis modes in mesotaxial Si/CoSi2/Si structures, as deduced from high resolution transmission electron microscopy (HRTEM). It is argued that relative crystal misalignments arising from the lattice parameter mismatch between the Si and CoSi2 may render classic rigid shift measurements of interfacial structure inaccurate. An alternative method for determining interfacial structure at threedimensional precipitates by analyzing crystal stacking sequences is demonstrated.

Studies on Epitaxial Relationship and Interface Structure of AlN/Si(111) and GaN/Si(111) Heterostructures

2002 ◽  
Vol 743 ◽  
Author(s):  
T. A. Rawdanowicz ◽  
H. Wang ◽  
A. Kvit ◽  
J. Narayan
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Epitaxial Growth ◽  
Interface Structure ◽  
Zone Axis ◽  
Epitaxial Relationship ◽  
Growth Interface ◽  
Transmission Electron

ABSTRACTWe present the details of epitaxial growth interface structure of single wurtzite AlN thin films on (111) Si substrates by laser-molecular-beam-epitaxy. High quality AlN thin films with atomically sharp interfaces can be obtained by Laser-MBE at a substrate temperature of 650 ±10°C. X-ray diffraction and high resolution transmission electron microscopy was used to study the details of epitaxial growth of AlN on Si(111) substrate. The orientation-relationship of AlN on Si(111) was studied from Si <110> and <112> zone axis and determined to be AlN [2110]|Si[110] and AlN [0110]|Si[211]. The atomic structure of the interface was studied by high-resolution transmission electron microscopy and Fourier filtered image of cross-sectional AlN/Si(111) samples from both Si<110> and <112> zone axis. The results revealed the domain matching epitaxy of 4:5 ratio between the interplanar distances of Si(110) and AlN [2110]. We also present similarities and differences between the growth mechanism of AlN/Si(111) and GaN/Si(111) heterostructures.

Interface structure of a YBa2Cu3O7−x/N/YBa2Cu3O7−x superconductor/normal metal/superconductor Josephson junction using YBa2Cu2.79Co0.21O7−x as the normal barrier N

1996 ◽  
Vol 11 (2) ◽  
pp. 281-287 ◽  
Author(s):  
S. Rozeveld ◽  
K. L. Merkle ◽  
K. Char
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Barrier Layer ◽  
Interface Structure ◽  
Laser Deposition ◽  
Interface Defects ◽  
Transmission Electron ◽  
State Resistance ◽  
Normal State Resistance

Superconductor-normal-superconductor (SNS) edge junctions consisting of YBa2Cu3O7/YBa2Cu2.79Co0.21O7−x/YBa2Cu3O7 were fabricated on (001) YSZ substrates using laser deposition. In contrast to other SNS junctions, e.g., with La0.5Sr0.5CoO3, CaRuO3, or SrRuO3 as the barrier layer, these devices do not display an excess normal-state resistance. High-resolution and conventional transmission electron microscopy (TEM) techniques were employed to investigate the SN interface structure and possible interface defects. Results are compared to recent TEM investigations of CaRuO3 SNS junctions.

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