Characterization of hot-carrier degradation in non-isolated MOSFETs using a new gate-current measurement technique

2002 ◽  
Author(s):  
S.E. Leang ◽  
D.S.H. Chan ◽  
W.K. Chim
Keyword(s):  
Measurement Technique ◽  
Current Measurement ◽  
Gate Current ◽  
Hot Carrier ◽  
Hot Carrier Degradation

Modelling hot-carrier degradation of LDD NMOSFETs by using a high-resolution measurement technique

1999 ◽  
Vol 39 (6-7) ◽  
pp. 785-790 ◽  
Author(s):  
R. Dreesen ◽  
K. Croes ◽  
J. Manca ◽  
W. De Ceuninck ◽  
L. De Schepper ◽  
...  
Keyword(s):  
High Resolution ◽  
Measurement Technique ◽  
Hot Carrier ◽  
High Resolution Measurement ◽  
Resolution Measurement ◽  
Hot Carrier Degradation

Characterization of hot carrier degradation within the gate oxide of short channel MOSFET's

1991 ◽  
Vol 74 (5) ◽  
pp. 379-387
Author(s):  
R. Mahnkopf ◽  
G. Przyrembel ◽  
H. G. Wagemann
Keyword(s):  
Gate Oxide ◽  
Short Channel ◽  
Hot Carrier ◽  
Hot Carrier Degradation

scholarly journals Characterization of hot carrier degradation within the gate oxide of short channel MOSFET's

1991 ◽  
Vol 75 (1) ◽  
pp. 8-8
Author(s):  
Beitrag R. Mahnkopf ◽  
G. Przyrembel ◽  
H. G. Wagemann
Keyword(s):  
Gate Oxide ◽  
Short Channel ◽  
Hot Carrier ◽  
Hot Carrier Degradation
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