A new gate current measurement technique for the characterization of hot-carrier induced degradation in MOSFETs
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1995 ◽
Vol 38
(10)
◽
pp. 1791-1798
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1996 ◽
Vol 35
(Part 2, No. 8B)
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pp. L1044-L1046
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1986 ◽
Vol 34
(1)
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pp. 119-122
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2014 ◽
Vol 31
(11)
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pp. 2736
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