AbstractA detailed understanding of the optical properties of self-catalysed (SC), zinc blende (ZB) dominant, nanowires (NWs) is crucial for the development of functional and impurity-free nanodevices. Despite the fact that SC InAs NWs mostly crystallize in the WZ/ZB phase, there are very limited reports on the photoluminescence (PL) properties of ZB InAs NWs. Here, we report on the PL properties of Molecular Beam Epitaxy grown, SC InAs NWs. The as-grown NWs exhibit a dominant band to band (BtB) peak associated with ZB, InAs with an emission energy of ~0.41 eV in good agreement with the band gap energy of ZB InAs and significantly lower than that of the wurtzite phase (~0.48 eV). The strong BtB peak persists to near room temperature with a distinct temperature-dependent red-shift and very narrow spectral linewidth of ~20 meV (10 K) which is much smaller than previously reported values. A narrowing in PL linewidth with increasing NWs diameter is correlated with a decline in the influence of surface defects resulting from an enlargement in NWs diameter. This study demonstrates the high optical property of SC InAs NWs which is compatible with the Si-complementary metal-oxide-semiconductor technology and paves the way for the monolithic integration of InAs NWs with Si in novel nanodevices.
Photoluminescence Characteristics of Zinc Blende InAs Nanowires
