Experimental characterization of enhancement mode gallium-nitride power field-effect transistors at cryogenic temperatures

2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) ◽

10.1109/wipda.2016.7799923 ◽

2016 ◽

Cited By ~ 8

Author(s):

Juan Colmenares ◽

Thomas Foulkes ◽

Christopher Barth ◽

Tomas Modeert ◽

Robert C. N. Pilawa-Podgurski

Keyword(s):

Gallium Nitride ◽

Field Effect ◽

Field Effect Transistors ◽

Cryogenic Temperatures ◽

Experimental Characterization ◽

Enhancement Mode

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ZnO/Si and ZnO/Ge bilayer tunneling field effect transistors: Experimental characterization of electrical properties

Journal of Applied Physics ◽

10.1063/1.5088893 ◽

2019 ◽

Vol 125 (19) ◽

pp. 195701 ◽

Cited By ~ 7

Author(s):

Kimihiko Kato ◽

Hiroaki Matsui ◽

Hitoshi Tabata ◽

Mitsuru Takenaka ◽

Shinichi Takagi

Keyword(s):

Electrical Properties ◽

Field Effect ◽

Field Effect Transistors ◽

Experimental Characterization ◽

Tunneling Field Effect Transistors

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Characterization of vertical GaN p–n diodes and junction field-effect transistors on bulk GaN down to cryogenic temperatures

Semiconductor Science and Technology ◽

10.1088/0268-1242/30/12/124001 ◽

2015 ◽

Vol 30 (12) ◽

pp. 124001 ◽

Cited By ~ 15

Author(s):

I C Kizilyalli ◽

O Aktas

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Cryogenic Temperatures ◽

Bulk Gan ◽

Junction Field Effect Transistors

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Fabrication and characterization of pre-aligned gallium nitride nanowire field-effect transistors

Nanotechnology ◽

10.1088/0957-4484/17/5/018 ◽

2006 ◽

Vol 17 (5) ◽

pp. 1264-1271 ◽

Cited By ~ 52

Author(s):

Ho-Young Cha ◽

Huaqiang Wu ◽

Mvs Chandrashekhar ◽

Y C Choi ◽

S Chae ◽

...

Keyword(s):

Gallium Nitride ◽

Field Effect ◽

Field Effect Transistors ◽

Fabrication And Characterization

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Electrical characterization of back-gated and top-gated germanium-core/silicon-shell nanowire field-effect transistors

2016 IEEE Silicon Nanoelectronics Workshop (SNW) ◽

10.1109/snw.2016.7578010 ◽

2016 ◽

Author(s):

Marolop Simanullang ◽

Gde B. M. Wisna ◽

Wei Cao ◽

Koichi Usami ◽

Kaustav Banerjee ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Electrical Characterization

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Fabrication and Characterization of GaN-based Nanostructure Field Effect Transistors

Solid-State Electronics ◽

10.1016/j.sse.2021.108079 ◽

2021 ◽

pp. 108079

Author(s):

Dong-Hyeok Son ◽

Terirama Thingujam ◽

Quan Dai ◽

Jeong-Gil Kim ◽

Sorin Cristoloveanu ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Fabrication And Characterization

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Enhancement‐Mode Field‐Effect Transistors and High‐Speed Integrated Circuits Based on Aligned Carbon Nanotube Films

Advanced Functional Materials ◽

10.1002/adfm.202104539 ◽

2021 ◽

pp. 2104539

Author(s):

Yanxia Lin ◽

Shibo Liang ◽

Lin Xu ◽

Lijun Liu ◽

Qianlan Hu ◽

...

Keyword(s):

Carbon Nanotube ◽

Integrated Circuits ◽

Field Effect ◽

High Speed ◽

Field Effect Transistors ◽

Enhancement Mode ◽

Mode Field ◽

Nanotube Films

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Synthesis and Characterization of Diperfluorooctyl-Substituted Phenylene−Thiophene Oligomers as n-Type Semiconductors. Molecular Structure−Film Microstructure−Mobility Relationships, Organic Field-Effect Transistors, and Transistor Nonvolatile Memory Elements

Chemistry of Materials ◽

10.1021/cm0495008 ◽

2004 ◽

Vol 16 (23) ◽

pp. 4715-4727 ◽

Cited By ~ 103

Author(s):

Antonio Facchetti ◽

Joseph Letizia ◽

Myung-Han Yoon ◽

Melissa Mushrush ◽

Howard E. Katz ◽

...

Keyword(s):

Molecular Structure ◽

Nonvolatile Memory ◽

Field Effect ◽

Field Effect Transistors ◽

Synthesis And Characterization ◽

Organic Field Effect Transistors ◽

Film Microstructure

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Fabrication and Characterization of 1700 V 4H-SiC Vertical Double-Implanted Metal-Oxide-Semiconductor Field-Effect Transistors

Chinese Physics Letters ◽

10.1088/0256-307x/32/12/127101 ◽

2015 ◽

Vol 32 (12) ◽

pp. 127101 ◽

Cited By ~ 1

Author(s):

Hua-Jun Shen ◽

Ya-Chao Tang ◽

Zhao-Yang Peng ◽

Xiao-Chuan Deng ◽

Yun Bai ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Fabrication And Characterization

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Threshold-voltage control and enhancement-mode characteristics in multilayer tin disulfide field-effect transistors by gate-oxide passivation with an alkylphosphonic acid self-assembled monolayer

Journal of Applied Physics ◽

10.1063/1.4914488 ◽

2015 ◽

Vol 117 (10) ◽

pp. 104509 ◽

Cited By ~ 9

Author(s):

Ute Zschieschang ◽

Tanja Holzmann ◽

Alexander Kuhn ◽

Mahdieh Aghamohammadi ◽

Bettina V. Lotsch ◽

...

Keyword(s):

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Voltage Control ◽

Gate Oxide ◽

Self Assembled Monolayer ◽

Enhancement Mode ◽

Tin Disulfide ◽

Mode Characteristics ◽

Alkylphosphonic Acid

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Electrical characterization of back-gated bi-layer MoS2 field-effect transistors and the effect of ambient on their performances

Applied Physics Letters ◽

10.1063/1.3696045 ◽

2012 ◽

Vol 100 (12) ◽

pp. 123104 ◽

Cited By ~ 385

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Electrical Characterization

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