Reliability of black phosphorus field-effect transistors with respect to bias-temperature and hot-carrier stress

2017 IEEE International Reliability Physics Symposium (IRPS) ◽

10.1109/irps.2017.7936338 ◽

2017 ◽

Author(s):

Yu. Yu. Illarionov ◽

M. Waltl ◽

M. Tech ◽

J.-S. Kim ◽

D. Akinwande ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Black Phosphorus ◽

Hot Carrier ◽

Hot Carrier Stress

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The Influence of Hf-Composition on Atomic Layer Deposition HfSiON Gated Metal–Oxide–Semiconductor Field-Effect Transistors after Channel-Hot-Carrier Stress

Japanese Journal of Applied Physics ◽

10.1143/jjap.48.04c009 ◽

2009 ◽

Vol 48 (4) ◽

pp. 04C009 ◽

Author(s):

Shuang-Yuan Chen ◽

Hung-Wen Chen ◽

Chuan-Hsi Liu ◽

Li-Wei Cheng

Keyword(s):

Atomic Layer Deposition ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Hot Carrier ◽

Layer Deposition ◽

Hot Carrier Stress

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Abnormal threshold voltage shift under hot carrier stress in Ti1−xNx/HfO2 p-channel metal-oxide-semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.4822158 ◽

2013 ◽

Vol 114 (12) ◽

pp. 124505 ◽

Author(s):

Jyun-Yu Tsai ◽

Ting-Chang Chang ◽

Wen-Hung Lo ◽

Szu-Han Ho ◽

Ching-En Chen ◽

...

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Threshold Voltage Shift ◽

Voltage Shift ◽

Hot Carrier ◽

Hot Carrier Stress

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Transconductance degradation and interface state generation in metal‐oxide‐semiconductor field‐effect transistors with oxynitride gate dielectrics under hot‐carrier stress

Applied Physics Letters ◽

10.1063/1.102819 ◽

1990 ◽

Vol 56 (3) ◽

pp. 250-252 ◽

Author(s):

G. Q. Lo ◽

W. C. Ting ◽

D. K. Shih ◽

D. L. Kwong

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gate Dielectrics ◽

Field Effect Transistors ◽

Interface State ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Hot Carrier ◽

Hot Carrier Stress ◽

State Generation

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Time-Dependent Drain- and Source-Series Resistance of High-Voltage Lateral Diffused Metal–Oxide–Semiconductor Field-Effect Transistors during Hot-Carrier Stress

Japanese Journal of Applied Physics ◽

10.1143/jjap.42.409 ◽

2003 ◽

Vol 42 (Part 1, No. 2A) ◽

pp. 409-413 ◽

Author(s):

Shih-hui Chen ◽

Jeng Gong ◽

Meng-chyi Wu ◽

Tsung-yi Huang ◽

Jei-feng Huang ◽

...

Keyword(s):

Metal Oxide ◽

High Voltage ◽

Field Effect ◽

Series Resistance ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Time Dependent ◽

Oxide Semiconductor ◽

Hot Carrier ◽

Hot Carrier Stress

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Impact of hot carrier stress on the defect density and mobility in double-gated graphene field-effect transistors

EUROSOI-ULIS 2015: 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon ◽

10.1109/ulis.2015.7063778 ◽

2015 ◽

Author(s):

Yu. Yu. Illarionov ◽

M. Waltl ◽

A.D. Smith ◽

S. Vaziri ◽

M. Ostling ◽

...

Keyword(s):

Field Effect ◽

Defect Density ◽

Field Effect Transistors ◽

Hot Carrier ◽

Hot Carrier Stress

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Abnormal sub-threshold swing degradation under dynamic hot carrier stress in HfO2/TiN n-channel metal-oxide-semiconductor field-effect-transistors

Applied Physics Letters ◽

10.1063/1.4811784 ◽

2013 ◽

Vol 103 (2) ◽

pp. 022106 ◽

Author(s):

Jyun-Yu Tsai ◽

Ting-Chang Chang ◽

Wen-Hung Lo ◽

Ching-En Chen ◽

Szu-Han Ho ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Hot Carrier ◽

Hot Carrier Stress

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Charge trapping induced drain-induced-barrier-lowering in HfO2/TiN p-channel metal-oxide-semiconductor-field-effect-transistors under hot carrier stress

Applied Physics Letters ◽

10.1063/1.3697644 ◽

2012 ◽

Vol 100 (15) ◽

pp. 152102 ◽

Author(s):

Wen-Hung Lo ◽

Ting-Chang Chang ◽

Jyun-Yu Tsai ◽

Chih-Hao Dai ◽

Ching-En Chen ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Charge Trapping ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Hot Carrier ◽

Hot Carrier Stress

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Threshold Voltage and 1/f Noise Degradation in Carbon Nanotube Field Effect Transistors under Hot-Carrier Stress

2008 Device Research Conference ◽

10.1109/drc.2008.4800758 ◽

2008 ◽

Author(s):

Paul Lim ◽

Xinran Wang ◽

Hongjie Dai ◽

Yoshio Nishi ◽

James Harris

Keyword(s):

Carbon Nanotube ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Hot Carrier ◽

Hot Carrier Stress

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Electrically Tunable Energy Bandgap in Dual-Gated Ultra-Thin Black Phosphorus Field Effect Transistors

Chinese Physics Letters ◽

10.1088/0256-307x/34/4/047304 ◽

2017 ◽

Vol 34 (4) ◽

pp. 047304 ◽

Author(s):

Shi-Li Yan ◽

Zhi-Jian Xie ◽

Jian-Hao Chen ◽

Takashi Taniguchi ◽

Kenji Watanabe

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Black Phosphorus ◽

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Effect of La$_{2}$O$_{3}$ Capping Layer Thickness on Hot-Carrier Degradation of n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with High-$k$/Metal Gate Stacks

Japanese Journal of Applied Physics ◽

10.1143/jjap.51.02bc10 ◽

2012 ◽

Vol 51 (2) ◽

pp. 02BC10

Author(s):

Dongwoo Kim ◽

Seonhaeng Lee ◽

Cheolgyu Kim ◽

Taekyung Oh ◽

Bongkoo Kang

Keyword(s):

Metal Oxide ◽

Layer Thickness ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Stacks ◽

Hot Carrier ◽

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