Electric-Field-Induced Dielectric Properties and Depolarization in Pb(Mg1/3Nb2/3)1-xTixO3 and Pb(In1/2Nb1/2)1-xTixO3 Crystals

2007 ◽  
Author(s):  
C.-S. Tu ◽  
C.-M. Hsieh ◽  
C.-T. Tseng ◽  
F.-T. Wang ◽  
S.-C. Lee ◽  
...  
Keyword(s):  
Dielectric Properties ◽  
Electric Field

Electrostatic Forces on Particles Floating Within the Interface Between Two Immiscible Fluids

2007 ◽  
Author(s):  
Nadine Aubry ◽  
Pushpendra Singh
Keyword(s):  
Dielectric Properties ◽  
Field Strength ◽  
Electric Field ◽  
Electric Field Strength ◽  
External Electric Field ◽  
Capillary Force ◽  
Electrostatic Force ◽  
Immiscible Fluids ◽  
Electrostatic Forces ◽  
Dipole Interactions

The objective of this paper is to study the dependence of the electrostatic force that act on a particle within the interface between two immiscible fluids on the parameters such as the dielectric properties of the fluids and particles, the particle’s position within the interface, and the electric field strength. It is shown that the component of electrostatic force normal to the interface varies as a2, where a is the particle radius, and since in equilibrium it is balanced by the vertical capillary force, the interfacial deformation caused by the particle changes when an external electric field is applied. In addition, there are lateral electrostatic forces among the particles due to the dipole-dipole interactions which, when the distance between two particles is O(a), vary as a2, and remain significant for submicron sized particles.

Electric field-assisted flash sintering of CaCu3Ti4O12: Microstructure characteristics and dielectric properties

2016 ◽  
Vol 682 ◽  
pp. 753-758 ◽  
Author(s):  
Lílian Menezes Jesus ◽  
Ronaldo Santos Silva ◽  
Rishi Raj ◽  
Jean-Claude M’Peko
Keyword(s):  
Dielectric Properties ◽  
Electric Field ◽  
Microstructure Characteristics ◽  
Flash Sintering

Pulsed Laser Deposition of BaxSr1−xTiO3 Films on MgO, LaAlO3 and SrTiO3 for Tunable Microwave Applications

1998 ◽  
Vol 541 ◽  
Author(s):  
Wontae Chang ◽  
James S. Horwitz ◽  
Won-Jeong Kim ◽  
Jeffrey M. Pond ◽  
Steven W. Kirchoefer ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Dielectric Properties ◽  
Electric Field ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Dielectric Constants ◽  
Laser Deposition ◽  
Film Stress ◽  
Donor Acceptor ◽  
Bst Films

AbstractSingle phase BaxSr1−xTiO3 (BST) films (∼0.5-7 μm thick) have been deposited onto single crystal substrates (MgO, LaAlO3, SrTiO3) by pulsed laser deposition. Silver interdigitated electrodes were deposited on top of the ferroelectric film. The room temperature capacitance and dielectric Q (1/tanδ) of the film have been measured as a function of electric field (≤80 kV/cm) at 1 - 20 GHz. The dielectric properties of the film are observed to strongly depend on substrate type and post-deposition processing. After annealing (≤1000° C), it was observed that the dielectric constant and % tuning decreased and the dielectric Q increased for films deposited onto MgO, and the opposite effect was observed for films deposited onto LaA1O3. Presumably, this change in dielectric properties is due to the changes in film stress. Very thin (∼50 Å) amorphous BST films were successfully used as a stress-relief layer for the subsequently deposited crystalline BST (∼5000 Å) films to maximize % tuning and dielectric Q. Films have been deposited from stoichiometric targets and targets that have excess Ba and Sr. The additional Ba and Sr has been added to the target to compensate for deficiencies in Ba and Sr observed in the deposited BST (x=0.5) films. Films deposited from compensated targets have higher dielectric constants than films deposited from stoichiometric targets. Donor/acceptor dopants have also been added to the BST target (Mn, W, Fe ≤4 mol.%) to further improve the dielectric properties. The relationship between the dielectric constant, the dielectric Q, the change in dielectric constant with electric field is discussed.

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