ScienceGate
Advanced Search
Author Search
Journal Finder
Blog
Sign in / Sign up
ScienceGate
Search
Author Search
Journal Finder
Blog
Sign in / Sign up
Impact of onpolar plane for deep ultraviolet laser diodes based on AlGa/AlN quantum wells
22nd IEEE International Semiconductor Laser Conference
◽
10.1109/islc.2010.5642731
◽
2010
◽
Author(s):
K. Kojima
◽
A. A. Yamaguchi
◽
M. Funato
◽
Y. Kawakami
◽
S. Noda
Keyword(s):
Quantum Wells
◽
Laser Diodes
◽
Ultraviolet Laser
◽
Deep Ultraviolet
Download Full-text
Related Documents
Cited By
References
Increased radiative recombination of AlGaN-based deep ultraviolet laser diodes with convex quantum wells
Optoelectronics Letters
◽
10.1007/s11801-020-9093-2
◽
2020
◽
Vol 16
(2)
◽
pp. 87-91
Author(s):
Zhong-qiu Xing
◽
Yong-jie Zhou
◽
Xue Chen
◽
Mussaab I. Niass
◽
Yi-fu Wang
◽
...
Keyword(s):
Quantum Wells
◽
Radiative Recombination
◽
Laser Diodes
◽
Ultraviolet Laser
◽
Deep Ultraviolet
Download Full-text
Impact of nonpolar AlGaN quantum wells on deep ultraviolet laser diodes
Journal of Applied Physics
◽
10.1063/1.3627180
◽
2011
◽
Vol 110
(4)
◽
pp. 043115
◽
Cited By ~ 19
Author(s):
K. Kojima
◽
A. A. Yamaguchi
◽
M. Funato
◽
Y. Kawakami
◽
S. Noda
Keyword(s):
Quantum Wells
◽
Laser Diodes
◽
Ultraviolet Laser
◽
Deep Ultraviolet
Download Full-text
Structure optimization of deep ultraviolet laser diodes with superlattice electron blocking layer
2021 9th International Symposium on Next Generation Electronics (ISNE)
◽
10.1109/isne48910.2021.9493641
◽
2021
◽
Author(s):
Liya Jia
◽
Mengzhen Wang
◽
Aoxiang Zhang
◽
Pengfei Zhang
◽
Fang Wang
◽
...
Keyword(s):
Laser Diodes
◽
Structure Optimization
◽
Blocking Layer
◽
Electron Blocking Layer
◽
Ultraviolet Laser
◽
Deep Ultraviolet
Download Full-text
Impact of heat treatment process on threshold current density in AlGaN-based deep-ultraviolet laser diodes on AlN substrate
Applied Physics Express
◽
10.35848/1882-0786/abf443
◽
2021
◽
Author(s):
Maki Kushimoto
◽
Ziyi Zhang
◽
Naoharu Sugiyama
◽
Yoshio HONDA
◽
Leo John Schowalter
◽
...
Keyword(s):
Heat Treatment
◽
Current Density
◽
Treatment Process
◽
Laser Diodes
◽
Threshold Current
◽
Threshold Current Density
◽
Heat Treatment Process
◽
Ultraviolet Laser
◽
Deep Ultraviolet
Download Full-text
Anderson Localization Enabled Spectrally Stable Deep-Ultraviolet Laser Based on Metallic Nanoparticle Decorated AlGaN Multiple Quantum Wells
ACS Nano
◽
10.1021/acsnano.0c04512
◽
2020
◽
Author(s):
Meng-Jer Wu
◽
Shang-Cheng Wu
◽
Tien-Lin Shen
◽
Yu-Ming Liao
◽
Yang-Fang Chen
Keyword(s):
Quantum Wells
◽
Anderson Localization
◽
Multiple Quantum Wells
◽
Multiple Quantum
◽
Metallic Nanoparticle
◽
Ultraviolet Laser
◽
Deep Ultraviolet
Download Full-text
Gain Properties of Type-II AlInN / ZnGeN2 Quantum Wells for Ultraviolet Laser Diodes
2019 IEEE Photonics Conference (IPC)
◽
10.1109/ipcon.2019.8908493
◽
2019
◽
Author(s):
Hanlin Fu
◽
Justin C. Goodrich
◽
Nelson Tansu
Keyword(s):
Quantum Wells
◽
Laser Diodes
◽
Type Ii
◽
Ultraviolet Laser
Download Full-text
X-ray characterization of GaN/AlGaN multiple quantum wells for ultraviolet laser diodes
Applied Physics Letters
◽
10.1063/1.120976
◽
1998
◽
Vol 72
(9)
◽
pp. 1004-1006
◽
Cited By ~ 23
Author(s):
D. Korakakis
◽
K. F. Ludwig
◽
T. D. Moustakas
Keyword(s):
Quantum Wells
◽
Laser Diodes
◽
Multiple Quantum Wells
◽
Multiple Quantum
◽
Ultraviolet Laser
◽
X Ray
Download Full-text
Type-II AlInN/ZnGeN2 quantum wells for ultraviolet laser diodes
Journal of Applied Physics
◽
10.1063/1.5120302
◽
2019
◽
Vol 126
(13)
◽
pp. 133103
◽
Cited By ~ 2
Author(s):
Hanlin Fu
◽
Justin C. Goodrich
◽
Onoriode Ogidi-Ekoko
◽
Nelson Tansu
Keyword(s):
Quantum Wells
◽
Laser Diodes
◽
Type Ii
◽
Ultraviolet Laser
Download Full-text
Low absorption loss p-AlGaN superlattice cladding layer for current-injection deep ultraviolet laser diodes
Applied Physics Letters
◽
10.1063/1.4947102
◽
2016
◽
Vol 108
(15)
◽
pp. 151108
◽
Cited By ~ 30
Author(s):
M. Martens
◽
C. Kuhn
◽
E. Ziffer
◽
T. Simoneit
◽
V. Kueller
◽
...
Keyword(s):
Laser Diodes
◽
Current Injection
◽
Absorption Loss
◽
Ultraviolet Laser
◽
Cladding Layer
◽
Deep Ultraviolet
Download Full-text
Reduction of Electron Leakage of AlGaN-Based Deep Ultraviolet Laser Diodes Using an Inverse-Trapezoidal Electron Blocking Layer
Chinese Physics Letters
◽
10.1088/0256-307x/37/2/027302
◽
2020
◽
Vol 37
(2)
◽
pp. 027302
Author(s):
Zhong-Qiu Xing
◽
Yong-Jie Zhou
◽
Yu-Huai Liu
◽
Fang Wang
Keyword(s):
Laser Diodes
◽
Blocking Layer
◽
Electron Blocking Layer
◽
Ultraviolet Laser
◽
Electron Leakage
◽
Deep Ultraviolet
Download Full-text
Sign in / Sign up
Close
Export Citation Format
Close
Share Document
Close