X-ray characterization of GaN/AlGaN multiple quantum wells for ultraviolet laser diodes

1998 ◽  
Vol 72 (9) ◽  
pp. 1004-1006 ◽  
Author(s):  
D. Korakakis ◽  
K. F. Ludwig ◽  
T. D. Moustakas
Keyword(s):  
Quantum Wells ◽  
Laser Diodes ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Ultraviolet Laser ◽  
X Ray

Kinematic versus dynamic approaches of x‐ray diffraction simulation. Application to the characterization of InGaAs/InGaAlAs multiple quantum wells

1996 ◽  
Vol 79 (5) ◽  
pp. 2332-2336 ◽  
Author(s):  
E. Idiart‐Alhor ◽  
J. Y. Marzin ◽  
M. Quillec ◽  
G. Le Roux ◽  
G. Patriarche
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
X Ray Diffraction ◽  
X Ray

Growth and Characterization of AlGaN/GaN Heterostructures with Multiple Quantum Wells by PAMBE

1996 ◽  
Vol 423 ◽  
Author(s):  
K. H. Shim ◽  
J. M. Myoung ◽  
O. V. Gluschenkov ◽  
C. Kim ◽  
K. Kim ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Molecular Beam ◽  
Functional Dependence ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
X Ray Diffraction ◽  
Structural And Optical Properties ◽  
X Ray ◽  
Good Agreement

AbstractAlGaN/GaN heterostructures with multiple quantum wells were grown by plasmaassisted molecular beam epitaxy (PAMBE). Structural and optical properties of the heterostructures were analyzed using x-ray diffraction, cathodoldminescence, and photoluminescence. Interband transitions were clearly observed in the GaN quantum wells at both room- and liquid-helium temperatures. The efficiency of the interband recombination due to the confinement effect was greatly enhanced in the thinner quantum wells. The functional dependence of the interband peaks on the well thickness is shown to be in good agreement with the calculated positions of the quantized levels in the wells.

Structural and Optical Characterization of ZnO/MgxZn1–xO Multiple Quantum Wells Based Random Laser Diodes

2012 ◽  
Vol 4 (12) ◽  
pp. 7043-7046 ◽  
Author(s):  
Qike Jiang ◽  
He Zheng ◽  
Jianbo Wang ◽  
Hao Long ◽  
Guojia Fang
Keyword(s):  
Quantum Wells ◽  
Laser Diodes ◽  
Optical Characterization ◽  
Multiple Quantum Wells ◽  
Random Laser ◽  
Multiple Quantum

Atomic scale characterization of GaInN/GaN multiple quantum wells in V-shaped pits

2011 ◽  
Vol 98 (18) ◽  
pp. 181904 ◽  
Author(s):  
Shigetaka Tomiya ◽  
Yuya Kanitani ◽  
Shinji Tanaka ◽  
Tadakatsu Ohkubo ◽  
Kazuhiro Hono
Keyword(s):  
Quantum Wells ◽  
Atomic Scale ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Scale Characterization

Optical characterization of type-II ZnO/ZnS multiple quantum wells grown by atomic layer deposition

2020 ◽  
Vol 694 ◽  
pp. 137740 ◽  
Author(s):  
Mostafa Afifi Hassan ◽  
Aadil Waseem ◽  
Muhammad Ali Johar ◽  
Sou Young Yu ◽  
June Key Lee ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Quantum Wells ◽  
Atomic Layer ◽  
Optical Characterization ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Type Ii ◽  
Layer Deposition
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