Low absorption loss p-AlGaN superlattice cladding layer for current-injection deep ultraviolet laser diodes

2016 ◽  
Vol 108 (15) ◽  
pp. 151108 ◽  
Author(s):  
M. Martens ◽  
C. Kuhn ◽  
E. Ziffer ◽  
T. Simoneit ◽  
V. Kueller ◽  
...  
Keyword(s):  
Laser Diodes ◽  
Current Injection ◽  
Absorption Loss ◽  
Ultraviolet Laser ◽  
Cladding Layer ◽  
Deep Ultraviolet

Increased radiative recombination of AlGaN-based deep ultraviolet laser diodes with convex quantum wells

2020 ◽  
Vol 16 (2) ◽  
pp. 87-91
Author(s):  
Zhong-qiu Xing ◽  
Yong-jie Zhou ◽  
Xue Chen ◽  
Mussaab I. Niass ◽  
Yi-fu Wang ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Radiative Recombination ◽  
Laser Diodes ◽  
Ultraviolet Laser ◽  
Deep Ultraviolet

Polarization Matching in AlGaN-Based Multiple-Quantum-Well Deep Ultraviolet Laser Diodes on AlN Substrates Using Quaternary AlInGaN Barriers

2012 ◽  
Vol 30 (18) ◽  
pp. 3017-3025 ◽  
Author(s):  
Md. Mahbub Satter ◽  
Zachary Lochner ◽  
Jae-Hyun Ryou ◽  
Shyh-Chiang Shen ◽  
Russell D. Dupuis ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Laser Diodes ◽  
Multiple Quantum ◽  
Ultraviolet Laser ◽  
Deep Ultraviolet

scholarly journals Electron Overflow to the AlGaN p-Cladding Layer in InGaN/GaN/AlGaN MQW Laser Diodes

1998 ◽  
Vol 3 ◽  
Author(s):  
Kay Domen ◽  
Reiko Soejima ◽  
Akito Kuramata ◽  
Toshiyuki Tanahashi
Keyword(s):  
Current Flow ◽  
Laser Diodes ◽  
Hole Mobility ◽  
Current Injection ◽  
Hole Injection ◽  
High Threshold ◽  
Conduction Band Offset ◽  
Cladding Layer ◽  
Flow Through ◽  
Multi Quantum Well

Current flow through an InGaN/GaN/AlGaN multi-quantum well (MQW) laser diode is simulated. We found that electron overflow to the AlGaN p-cladding layer is very large, which prevents the current injection into the MQW layers. We clarified that the electron overflow occurs easily in nitride lasers because of three intrinsic reasons; poor hole injection due to the small hole mobility and thermal velocity, the small conduction band offset for InGaN/GaN, and the high threshold carrier density. We show that the Al composition and the p-doping of the AlGaN p-cladding layer is of critical importance to obtain laser oscillation by current injection.

scholarly journals Impact of nonpolar AlGaN quantum wells on deep ultraviolet laser diodes

2011 ◽  
Vol 110 (4) ◽  
pp. 043115 ◽  
Author(s):  
K. Kojima ◽  
A. A. Yamaguchi ◽  
M. Funato ◽  
Y. Kawakami ◽  
S. Noda
Keyword(s):  
Quantum Wells ◽  
Laser Diodes ◽  
Ultraviolet Laser ◽  
Deep Ultraviolet
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