Buried hetero structure laser diode on directly bonded InP/Si substrate

2021 ◽  
Author(s):  
Xu Han ◽  
Koki Tsushima ◽  
Takuto Shirai ◽  
Motonari Sato ◽  
Shingo Ito ◽  
...  
Keyword(s):  
Laser Diode ◽  
Si Substrate ◽  
Hetero Structure ◽  
Structure Laser ◽  
Buried Hetero Structure

Low-Loss Optical Interposer with Recessed Vertical-Cavity Surface-Emitting Laser Diode and Photodiode Chips into Si Substrate

2008 ◽  
Vol 47 (4) ◽  
pp. 2936-2940 ◽  
Author(s):  
Makoto Fujiwara ◽  
Shinsuke Terada ◽  
Yoji Shirato ◽  
Hiroshi Owari ◽  
Kei Watanabe ◽  
...  
Keyword(s):  
Laser Diode ◽  
Cavity Surface ◽  
Si Substrate ◽  
Low Loss ◽  
Vertical Cavity Surface ◽  
Surface Emitting Laser ◽  
Vertical Cavity

Investigation of buffer structures for the growth of a high quality AlGaN/GaN hetero-structure with a high power operation FET on Si substrate using MOCVD

2006 ◽  
Vol 203 (7) ◽  
pp. 1739-1743 ◽  
Author(s):  
Seikoh Yoshida ◽  
Sadahiro Katoh ◽  
Hironari Takehara ◽  
Yoshihiro Satoh ◽  
Jiang Li ◽  
...  
Keyword(s):  
High Power ◽  
Si Substrate ◽  
High Quality ◽  
Hetero Structure ◽  
High Power Operation ◽  
Power Operation

1.5μm Laser Diode on InP/Si substrate by Epitaxial growth using Direct Bonding Method

2017 ◽  
Author(s):  
Periyanayagam Gandhi Kallarasan ◽  
Tetsuo Nishiyama ◽  
Naoki Kamada ◽  
Yuya Onuki ◽  
Kazuhiko Shimomura
Keyword(s):  
Epitaxial Growth ◽  
Laser Diode ◽  
Si Substrate ◽  
Bonding Method

Monolithically Integrated AlGaAs/InGaAs Laser Diode, p-n Photodetector and GaAs MESFET Grown on Si Substrate

1993 ◽  
Vol 32 (Part 1, No. 1B) ◽  
pp. 650-653 ◽  
Author(s):  
Takashi Egawa ◽  
Takashi Jimbo ◽  
Masayoshi Umeno
Keyword(s):  
Laser Diode ◽  
Si Substrate ◽  
Monolithically Integrated ◽  
Gaas Mesfet

MOVPE grown GaInAsP/GaInAsP SCH-MQW laser diode on directly-bonded InP/Si substrate

2019 ◽  
Vol 507 ◽  
pp. 93-97 ◽  
Author(s):  
Hirokazu Sugiyama ◽  
Kazuki Uchida ◽  
Xu Han ◽  
Gandhi Kallarasan Periyanayagam ◽  
Masaki Aikawa ◽  
...  
Keyword(s):  
Laser Diode ◽  
Si Substrate

1.5 μm GaInAsP High Mesa Laser Diode on Directly Bonded InP/Si Substrate

2018 ◽  
Author(s):  
Gandhi Kallarasan Periyanayagam ◽  
Kazuki Uchida ◽  
Hirokazu Sugiyama ◽  
Xu Han ◽  
Natsuki Hayasaka ◽  
...  
Keyword(s):  
Laser Diode ◽  
Si Substrate

Epitaxial Growth of CoSi2/Si Hetero-Structure by Solid State Interaction of Co/Ti/Si Multilayer

1994 ◽  
Vol 337 ◽  
Author(s):  
Bing-zong Li ◽  
Wei-Jun Wu ◽  
Kai Shao ◽  
Zhi-Guang Gu ◽  
Guo-Bao Jiang ◽  
...  
Keyword(s):  
Solid State ◽  
Epitaxial Growth ◽  
Multilayer Structure ◽  
State Interaction ◽  
Si Substrate ◽  
Ternary Interaction ◽  
Hetero Structure ◽  
Diffusion Controlled ◽  
Annealing Procedure ◽  
Solid State Interaction

ABSTRACTA new method of epitaxial growth of CoSi2 film on Si substrate by ternary solid state interaction is investigated. XRD, RBS and TEM show that single-crystalline CoSi2 can be formed on both Si (111) and (100) substrates by using Co/Ti/Si or TiN/Co/Ti/Si multilayer. The evolution of multilayer structure and its resistivity is studied and epitaxy mechanism is discussed. Experimental results indicate strong affinity between Co and Si. During the ternary interaction the epitaxial CoSi2 can be grown directly on Si and its growth may behave as a diffusion controlled process. The thickness of Ti layer and the annealing procedure have important effect on CoSi2 epitaxial growth.

Sign in / Sign up

Export Citation Format

Share Document