ABSTRACTThis review emphasizes controlled shallow doping of GaAs by ion implantation for state-of-art GaAs IC technology. Electrical activation behavior of Si+ and SiF+ implanted GaAs after RTA under capless and PECVD Si3N4-capped conditions will be compared. It will be demonstrated that a remarkable improvement (> 20 %) both in carrier activation and as well mobility can be achieved by co-implanting low doses (< 1013 cm−2 of Al+ into n-dopant (including Si, Se and Te) implanted GaAs and subsequently annealing the material under capless RTA conditions. The maximum improvement in the electrical results with Al+ co-implants occurs for doses (e.g. < 1013 cm−2 for 30 keV Si+) which are used for fabricating shallow channels for submicron GaAs MESFETs. Complex dopant-annealing environment interactions during a buried p layer formation (using either Mg+ or Be+) will be discussed.
