Shallow Ion Implantation in Gallium Arsenide Mesfet Technology

1991 ◽  
Vol 240 ◽  
Author(s):  
J. P. de Souza ◽  
D. K. Sadana
Keyword(s):  
Gallium Arsenide ◽  
Ion Implantation ◽  
Electrical Activation ◽  
Low Doses ◽  
Layer Formation ◽  
Remarkable Improvement ◽  
Maximum Improvement ◽  
Activation Behavior ◽  
State Of Art ◽  
Ic Technology

ABSTRACTThis review emphasizes controlled shallow doping of GaAs by ion implantation for state-of-art GaAs IC technology. Electrical activation behavior of Si+ and SiF+ implanted GaAs after RTA under capless and PECVD Si3N4-capped conditions will be compared. It will be demonstrated that a remarkable improvement (> 20 %) both in carrier activation and as well mobility can be achieved by co-implanting low doses (< 1013 cm−2 of Al+ into n-dopant (including Si, Se and Te) implanted GaAs and subsequently annealing the material under capless RTA conditions. The maximum improvement in the electrical results with Al+ co-implants occurs for doses (e.g. < 1013 cm−2 for 30 keV Si+) which are used for fabricating shallow channels for submicron GaAs MESFETs. Complex dopant-annealing environment interactions during a buried p layer formation (using either Mg+ or Be+) will be discussed.

Scanned Electron Beam Annealing of Boron-Implanted Diodes

1980 ◽  
Vol 1 ◽  
Author(s):  
T. O. Yep ◽  
R. T. Fulks ◽  
R. A. Powell
Keyword(s):  
Electron Beam ◽  
Ion Implantation ◽  
Reverse Bias ◽  
Carrier Lifetime ◽  
Reverse Current ◽  
Electrical Activation ◽  
Electrical Characteristics ◽  
Low Resolution ◽  
Implantation Damage ◽  
Dopant Redistribution

ABSTRACTSuccessful annealing of p+ n arrays fabricated by ion-implantation of 11B (50 keV, 1 × 1014 cm-2) into Si (100 has been performed using a broadly rastered, low-resolution (0.25-inch diameter) electron beam. A complete 2" wafer could be uniformly annealed in ≃20 sec with high electrical activation (>75%) and small dopant redistribution (≃450 Å). Annealing resulted In p+n junctions characterized by low reverse current (≃4 nAcm-2 at 5V reverse bias) and higher carrier lifetime (80 μsec) over the entire 2" wafer. Based on the electrical characteristics of the diodes, we estimate that the electron beam anneal was able to remove ion implantation damage and leave an ordered substrate to a depth of 5.5 m below the layer junction.

Characterization of Ion Implantation Damage in Capless Annealed GaAs

1983 ◽  
Vol 27 ◽  
Author(s):  
H. Kanber ◽  
M. Feng ◽  
J. M. Whelan
Keyword(s):  
Ion Implantation ◽  
Annealing Temperature ◽  
Rutherford Backscattering ◽  
Buffer Layers ◽  
Electrical Activation ◽  
Controlled Atmosphere ◽  
Damage Characteristics ◽  
Implantation Damage ◽  
Implantation Process

ABSTRACTArsenic and argon implantation damage is characterized by Rutherford backscattering in GaAs undoped VPE buffer layers grown on Cr-O doped semi-insulating substrates and capless annealed in a H2 −As4 atmosphere provided by AsH3. The damage detected in the RBS channeled spectra varies as a function of the ion mass, the implant depth and the annealing temperature of the stress-free controlled atmosphere technique. This damage is discussed in terms of the stoichiometric disturbances introduced by the implantation process. The as-implanted and annealed damage characteristics of the Ar and As implants are correlated to the electrical activation characteristics of Si and Se implants in GaAs, respectively.

Effects of silicon negative ion implantation in semi-insulating gallium arsenide

2019 ◽  
Vol 174 (7-8) ◽  
pp. 636-646
Author(s):  
Ajay Yadav ◽  
S. K. Dubey ◽  
V. Bambole ◽  
R. L. Dubey ◽  
I. Sulania ◽  
...  
Keyword(s):  
Gallium Arsenide ◽  
Ion Implantation ◽  
Negative Ion

Impurity gettering in semi‐insulating gallium arsenide using ion‐implantation damage

1976 ◽  
Vol 29 (11) ◽  
pp. 698-699 ◽  
Author(s):  
C. O. Bozler ◽  
J. P. Donnelly ◽  
W. T. Lindley ◽  
R. A. Reynolds
Keyword(s):  
Gallium Arsenide ◽  
Ion Implantation ◽  
Implantation Damage

Planar optical waveguide in potassium titanyl arsenate formed by oxygen ion implantation at low doses

2006 ◽  
Vol 88 (1) ◽  
pp. 011114 ◽  
Author(s):  
Yi Jiang ◽  
Ke-Ming Wang ◽  
Xue-Lin Wang ◽  
Chuan-Lei Jia ◽  
Lei Wang ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Optical Waveguide ◽  
Low Doses ◽  
Planar Optical Waveguide ◽  
Oxygen Ion ◽  
Oxygen Ion Implantation

The Effect of Mass Resolution During Ion Implantation on Defect Formation and Electrical Properties in Gallium Arsenide.

1993 ◽  
Vol 316 ◽  
Author(s):  
Craig Jasper ◽  
Scott Klingbeil ◽  
K.S. Jones ◽  
H.G. Robinson
Keyword(s):  
Gallium Arsenide ◽  
Electrical Properties ◽  
Ion Implantation ◽  
Threshold Voltage ◽  
Defect Formation ◽  
Mass Resolution ◽  
Resolving Power ◽  
Cross Contamination ◽  
Mass Resolving Power ◽  
Aperture Opening

ABSTRACTControl of threshold voltage during gallium arsenide (GaAs) Metal Semiconductor Field Effect Transistor (MESFET) processing is critical. Channel formation typically is done using ion implantation of 29Si+ from a SiF4 source. The use of Si+ presents a variety of potential cross-contamination problems. 28Si+ and 30Si+ beams can become contaminated with 28N2+, 28CO+, and 30NO+. While 29Si+ is relatively pure, the abundance of 29Si+ in the mass spectrum is 4.67%, thus reducing the potential beam current. This study investigates the effects of varying the mass resolving power of an Eaton 6200AV implanter on the electrical parameters and defect formation. The mass resolving power was adjusted by changing the mean path size through the slit of the aperture opening and magnetic separator current. Electrical device characterization measured a small shift in saturated source-drain current (Idss) and break down voltage, while threshold voltage shifts of approximately 80 mV were observed, with the various mass resolution powers. Transmission Electron Microscopy (TEM) showed that there is minimal change in the extended defect density with changes in isotope and aperture opening. Secondary Ion Mass Spectrometry (SIMS) measured the amount of cross contamination and these results correlated well with the observed changes in device electrical properties.

Gallium arsenide transferred‐electron devices by low‐level ion implantation

1980 ◽  
Vol 51 (6) ◽  
pp. 3175-3177 ◽  
Author(s):  
W. T. Anderson ◽  
H. B. Dietrich ◽  
E. W. Swiggard ◽  
S. H. Lee ◽  
M. L. Bark
Keyword(s):  
Gallium Arsenide ◽  
Ion Implantation ◽  
Low Level ◽  
Electron Devices

Transient Annealing of Ion Implanted Gallium Arsenide

1982 ◽  
Vol 13 ◽  
Author(s):  
J.S. Williams
Keyword(s):  
Gallium Arsenide ◽  
Liquid Phase ◽  
Electrical Properties ◽  
Ion Implantation ◽  
Solid Phase ◽  
Dopant Activation ◽  
Implantation Damage ◽  
Dopant Redistribution ◽  
Ion Implanted

ABSTRACTThis paper provides a brief overview of the application of transient annealing to the removal of ion implantation damage and dopant activation in GaAs. It is shown that both the liquid phase and solid phase annealing processes are more complex in GaAs than those observed in Si. Particular attention is given to observations of damage removal, surface dissociation, dopant redistribution, solubility and the electrical properties of GaAs. The various annealing mechanisms are discussed and areas in need of further investigation are identified.

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