High temperature and high power stability investigation of Al-based ohmic contacts to p-type 4H-SiC

2005 ◽  
Author(s):  
R. Kakanakov ◽  
L. Kasamakova-Kolaklieva ◽  
N. Hristeva ◽  
G. Lepoeva ◽  
J.B. Gomes ◽  
...  
Keyword(s):  
High Temperature ◽  
High Power ◽  
Ohmic Contacts ◽  
Power Stability ◽  
Stability Investigation ◽  
P Type

High Temperature and High Power Stability Investigation of Al-Based Ohmic Contacts to p-Type 4H-SiC

2004 ◽  
Vol 457-460 ◽  
pp. 877-880 ◽  
Author(s):  
Roumen Kakanakov ◽  
L. Kasamakova-Kolaklieva ◽  
N. Hristeva ◽  
G. Lepoeva ◽  
J.B. Gomes ◽  
...  
Keyword(s):  
High Temperature ◽  
High Power ◽  
Ohmic Contacts ◽  
Power Stability ◽  
Stability Investigation ◽  
P Type

High temperature Ohmic contacts to p-type GaN for use in light emitting applications

2008 ◽  
Vol 5 (6) ◽  
pp. 2241-2243
Author(s):  
L. F. Voss ◽  
L. Stafford ◽  
M. Hlad ◽  
B. P. Gila ◽  
C. R. Abernathy ◽  
...  
Keyword(s):  
High Temperature ◽  
Ohmic Contacts ◽  
Light Emitting ◽  
P Type

Low-resistance p-type ohmic contacts for high-power InGaAs/GaAs-980nm CW semiconductor lasers

Vacuum ◽  
2008 ◽  
Vol 82 (10) ◽  
pp. 977-981 ◽  
Author(s):  
Anna Szerling ◽  
Piotr Karbownik ◽  
Adam Łaszcz ◽  
Kamil Kosiel ◽  
Maciej Bugajski
Keyword(s):  
Semiconductor Lasers ◽  
High Power ◽  
Ohmic Contacts ◽  
Low Resistance ◽  
P Type

High temperature stability of chromium boride ohmic contacts to p-type 6H-SiC

1998 ◽  
Vol 27 (4) ◽  
pp. 324-329 ◽  
Author(s):  
T. N. Oder ◽  
J. R. Williams ◽  
M. J. Bozack ◽  
V. Iyer ◽  
S. E. Mohney ◽  
...  
Keyword(s):  
High Temperature ◽  
Ohmic Contacts ◽  
Temperature Stability ◽  
High Temperature Stability ◽  
Chromium Boride ◽  
P Type

On the Ti3SiC2 Metallic Phase Formation for Robust p-Type 4H-SiC Ohmic Contacts

2014 ◽  
Vol 778-780 ◽  
pp. 693-696 ◽  
Author(s):  
Michael R. Jennings ◽  
Craig A. Fisher ◽  
David Walker ◽  
Ana Sanchez ◽  
Amador Pérez-Tomás ◽  
...  
Keyword(s):  
High Temperature ◽  
Ohmic Contacts ◽  
Thermionic Emission ◽  
Metallic Phase ◽  
Electrical Performance ◽  
Physical Study ◽  
Semiconductor Junction ◽  
Specific Contact ◽  
P Type ◽  
High Temperature Study

This paper presents a detailed physical and electrical analysis of 4H-SiC ohmic contacts to p-type material, the main aim being to examine their ruggedness under high temperature conditions. XRD, FIB-TEM and SEM are techniques that have been utilized to examine the microstructure and interface properties respectively. A detailed physical study revealed the presence of a crystalline hexagonal Ti layer orientated in the same direction as the 4H-SiC epitaxial layer. This factor seems to be important in terms of electrical performance, having the lowest measured specific contact resistivity of 1x10-6Ωcm2. We attribute this to the optimized formation of Ti3SiC2at the metal/SiC interface. An initial high temperature study shows thermionic emission occurring across the metal/semiconductor junction.

Reliable Ohmic Contacts to LPE p-Type 4H-SiC for High-Power p-n Diode

2002 ◽  
Vol 389-393 ◽  
pp. 917-920 ◽  
Author(s):  
Roumen Kakanakov ◽  
Liliana Kassamakova ◽  
N. Hristeva ◽  
G. Lepoeva ◽  
N.I. Kuznetsov ◽  
...  
Keyword(s):  
High Power ◽  
Ohmic Contacts ◽  
P Type
Sign in / Sign up

Export Citation Format

Share Document