Electrical Characterization of Titanium-Based Ohmic Contacts to 4H-Silicon Carbide for High-Power and High-Temperature Operation

Prototype 800 V, 47 A enhancement-mode SiC VJFETs have been developed for high temperature operation (250 °C). With an active area of 23 mm2 and target threshold voltage of +1.25 V, these devices exhibited a 28 m room temperature on-resistance and excellent blocking characteristics at elevated temperature. With improved device packaging, on-resistance and saturation current values of 15 m and 100 A, respectively, are achievable.

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Low resistivity ohmic contacts on 4H-silicon carbide for high power and high temperature device applications

Microelectronic Engineering ◽

10.1016/s0167-9317(01)00603-7 ◽

2002 ◽

Vol 60 (1-2) ◽

pp. 261-268 ◽

Cited By ~ 27

Author(s):

S.-K Lee ◽

C.-M Zetterling ◽

M Östling ◽

J.-P Palmquist ◽

U Jansson

Keyword(s):

Silicon Carbide ◽

High Temperature ◽

High Power ◽

Ohmic Contacts ◽

Low Resistivity ◽

Device Applications

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Electrical characterization of carbon monoxide sensitive high temperature sensor diode based on catalytic metal gate-insulator-silicon carbide structure

IEEE Sensors Journal ◽

10.1109/jsen.2002.805036 ◽

2002 ◽

Vol 2 (5) ◽

pp. 379-386 ◽

Cited By ~ 24

Author(s):

S. Nakagomi ◽

A.L. Spetz ◽

I. Lundstrom ◽

P. Tobias

Keyword(s):

Carbon Monoxide ◽

Silicon Carbide ◽

High Temperature ◽

Temperature Sensor ◽

Electrical Characterization ◽

Gate Insulator ◽

Metal Gate ◽

High Temperature Sensor ◽

Catalytic Metal

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Structural and electrical characterization of ohmic contacts to graphitized silicon carbide

Nanotechnology ◽

10.1088/0957-4484/20/49/495703 ◽

2009 ◽

Vol 20 (49) ◽

pp. 495703 ◽

Cited By ~ 5

Author(s):

Mohammad H Maneshian ◽

Ming-Te Lin ◽

David Diercks ◽

Nigel D Shepherd

Keyword(s):

Silicon Carbide ◽

Ohmic Contacts ◽

Electrical Characterization

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Fabrication and characterization of pulse laser deposited Ni2Si Ohmic contacts on n-SiC for high power and high temperature device applications

Journal of Applied Physics ◽

10.1063/1.1357777 ◽

2001 ◽

Vol 89 (8) ◽

pp. 4413-4416 ◽

Cited By ~ 20

Author(s):

M. W. Cole ◽

P. C. Joshi ◽

M. Ervin

Keyword(s):

High Temperature ◽

Pulse Laser ◽

High Power ◽

Ohmic Contacts ◽

Device Applications ◽

Fabrication And Characterization

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Improved electrical characterization of Al–Ti ohmic contacts on p-type ion implanted 6H-SiC

Semiconductor Science and Technology ◽

10.1088/0268-1242/18/6/328 ◽

2003 ◽

Vol 18 (6) ◽

pp. 554-559 ◽

Cited By ~ 24

Author(s):

F Moscatelli ◽

A Scorzoni ◽

A Poggi ◽

G C Cardinali ◽

R Nipoti

Keyword(s):

Ohmic Contacts ◽

Electrical Characterization ◽

P Type ◽

Ion Implanted

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Physical Properties of SiC

MRS Bulletin ◽

10.1557/s0883769400032723 ◽

1997 ◽

Vol 22 (3) ◽

pp. 25-29 ◽

Cited By ~ 168

Author(s):

W.J. Choyke ◽

G. Pensl

Keyword(s):

Silicon Carbide ◽

High Temperature ◽

Physical Properties ◽

Chemical Bond ◽

High Power ◽

National Program ◽

High Radiation ◽

Electrical Switching ◽

Oil Drilling ◽

Drilling Technology

While silicon carbide has been an industrial product for over a century, it is only now emerging as the semiconductor of choice for high-power, high-temperature, and high-radiation environments. From electrical switching and sensors for oil drilling technology to all-electric airplanes, SiC is finding a place which is difficult to fill with presently available Si or GaAs technology. In 1824 Jöns Jakob Berzelius published a paper which suggested there might be a chemical bond between the elements carbon and silicon. It is a quirk of history that he was born in 1779 in Linköping, Sweden where he received his early education, and now, 172 years later, Linkoping University is the center of a national program in Sweden to study the properties of SiC as a semiconductor.

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