Current transport in MIM Structures

2009 ◽  
Author(s):  
Juraj Racko ◽  
Ladislav Harmatha ◽  
Frank Schwierz ◽  
Ralf Granzner ◽  
Juraj Breza ◽  
...  
Keyword(s):  
Current Transport

Current Transport Mechanism of High-Performance Novel GaN MIS Diode

2021 ◽  
Vol 42 (3) ◽  
pp. 304-307
Author(s):  
Tao Zhang ◽  
Yanni Zhang ◽  
Jincheng Zhang ◽  
Xiangdong Li ◽  
Yueguang Lv ◽  
...  
Keyword(s):  
Transport Mechanism ◽  
High Performance ◽  
Current Transport ◽  
Current Transport Mechanism ◽  
Mis Diode

scholarly journals Leakage current transport mechanisms of La0.67Sr0.33MnO3/BaTiO3 bilayer films grown on Nb:SrTiO3

2015 ◽  
Vol 38 (3) ◽  
pp. 725-729 ◽  
Author(s):  
PAN RUIKUN ◽  
LIU PANKE ◽  
LI MINGKAI ◽  
TAO HAIZHENG ◽  
LI PAI ◽  
...  
Keyword(s):  
Leakage Current ◽  
Current Transport ◽  
Transport Mechanisms ◽  
Bilayer Films

Current Transport in Ti/Al/Ni/Au Ohmic Contacts to GaN and AlGaN

2007 ◽  
Vol 556-557 ◽  
pp. 1027-1030 ◽  
Author(s):  
Ferdinando Iucolano ◽  
Fabrizio Roccaforte ◽  
Filippo Giannazzo ◽  
A. Alberti ◽  
Vito Raineri
Keyword(s):  
Contact Resistance ◽  
Field Emission ◽  
Ohmic Contacts ◽  
Theoretical Models ◽  
Specific Contact Resistance ◽  
Strong Increase ◽  
Current Transport ◽  
Electrical Characteristics ◽  
Structural And Electrical Properties ◽  
Specific Contact

In this work, the structural and electrical properties of Ti/Al/Ni/Au contacts on n-type Gallium Nitride were studied. An ohmic behaviour was observed after annealing above 700°C. The structural analysis showed the formation of an interfacial TiN layer and different phases in the reacted layer (AlNi, AlAu4, Al2Au) upon annealing. The temperature dependence of the specific contact resistance demonstrated that the current transport occurs through thermoionic field emission in the contacts annealed at 600°C, and field emission after annealing at higher temperatures. By fitting the data with theoretical models, a reduction of the Schottky barrier from 1.21eV after annealing at 600°C to 0.81eV at 800°C was demonstrated, together with a strong increase of the carrier concentration at the interface. The reduction of the contact resistance upon annealing was discussed by correlating the structural and electrical characteristics of the contacts.

Current transport in bistable granular structures

1975 ◽  
Vol 17 (8) ◽  
pp. 939-943 ◽  
Author(s):  
A. Moser ◽  
H. Rohrer
Keyword(s):  
Current Transport

Mechanism of current transport in Schottky barrier diodes based on coarse-grained CdTe films

2012 ◽  
Vol 54 (9) ◽  
pp. 1751-1763 ◽  
Author(s):  
Sh. A. Mirsagatov ◽  
A. K. Uteniyazov ◽  
A. S. Achilov
Keyword(s):  
Schottky Barrier ◽  
Coarse Grained ◽  
Current Transport ◽  
Schottky Barrier Diodes ◽  
Cdte Films
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