BST thin film capacitors integrated within a frequency tunable antenna

The relationship between the distribution of hydrogen and the electrical properties of (Ba, Sr)TiO3 (BST) thin film capacitors was investigated using secondary ion mass spectroscopy (SIMS) analyses. It has been clearly shown that there is a close relationship between the hydrogen distribution in BST thin film and the frequency dependence of the complex impedance of the BST thin film capacitors. It was confirmed that protons, the interstitial hydrogen impurity dissolved in BST thin films annealed at 400oC, were produced by a thermal equilibrium reaction between the hydrogen in the annealing atmosphere and the BST thin films.

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Behavior of Hydrogen Atoms in Perovskite-Type Oxide Thin Films under Electric Fields

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.421-422.281 ◽

2009 ◽

Vol 421-422 ◽

pp. 281-284 ◽

Cited By ~ 1

Author(s):

Kentaro Morito ◽

Toshimasa Suzuki ◽

Youichi Mizuno ◽

Isao Sakaguchi ◽

Naoki Ohashi ◽

...

Keyword(s):

Thin Film ◽

Thin Films ◽

Electric Fields ◽

Mass Spectroscopy ◽

Hydrogen Atoms ◽

Perovskite Type Oxide ◽

Thin Film Capacitors ◽

Bst Thin Film ◽

Secondary Ion ◽

Perovskite Type

The behavior of hydrogen in (Ba,Sr)TiO3 (BST) thin film capacitors under electric fields was investigated by performing secondary ion mass spectroscopy (SIMS) analyses. It was clearly observed that the ingress of atmospheric hydrogen into BST thin film capacitors occurred through the anode and that it diffused toward the cathode under electric fields. In addition, it was found that the deterioration of the I-V properties of the BST thin film capacitors can be interpreted in terms of the distribution of hydrogen concentration in the BST thin films.

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Textured BST Thin Film on Silicon Substrate: Preparation and Its Applications for High Frequency Tunable Devices

Coatings and Thin-Film Technologies ◽

10.5772/intechopen.79270 ◽

2019 ◽

Author(s):

Conchun Zhang ◽

Jianze Huang ◽

Chunsheng Yang ◽

Guifu Ding

Keyword(s):

Thin Film ◽

Silicon Substrate ◽

High Frequency ◽

Substrate Preparation ◽

Bst Thin Film ◽

Frequency Tunable

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Effect of Metal-Dielectric Interfaces on Tunability in Barium Strontium Titanate Thin-Film Capacitor

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.445.140 ◽

2010 ◽

Vol 445 ◽

pp. 140-143

Author(s):

Naohiro Horiuchi ◽

Takuya Hoshina ◽

Hiroaki Takeda ◽

Osamu Sakurai ◽

Takaaki Tsurumi

Keyword(s):

Thin Film ◽

Interface Layer ◽

Depletion Layer ◽

Metal Electrodes ◽

External Bias ◽

Thin Film Capacitors ◽

Dielectric Interfaces ◽

Bst Thin Film ◽

Bst Films ◽

The Difference

We investigated an influence of interface layer on a tunability of parallel plate (Ba, Sr)TiO3 thin film capacitors. BST thin film capacitors with top electrode of Pt, Au and Ag were fabricated. BST films had thickness of 40, 60, 80 and 120nm. The tunability increased with increasing the BST film thickness. Considering the interfaces between BST films and electrodes as Schottky junctions, depletion layers were formed in the interfaces depending on the difference of the work function of metal electrodes. Larger external bias voltages were applied to the depletion layer than interior BST film, because the permittivity in the depletion layer was smaller than that in interior BST film. Therefore, the depletion layer lowered the tunability. Tunability decreased with increasing the thickness of the depletion layers.

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