Electrical Properties in Group IV Elements-Doped ZnO Thin-Film Transistors

2015 ◽  
Vol 11 (8) ◽  
pp. 670-673 ◽  
Author(s):  
Zhe Li ◽  
Lei Xu ◽  
Ablat Abliz ◽  
Yang Hua ◽  
Jinchai Li ◽  
...  
Keyword(s):  
Thin Film ◽  
Electrical Properties ◽  
Thin Film Transistors ◽  
Group Iv ◽  
Zno Thin Film ◽  
Doped Zno ◽  
Group Iv Elements

Tunable Electrical Properties in High-Valent Transition-Metal-Doped ZnO Thin-Film Transistors

2014 ◽  
Vol 35 (7) ◽  
pp. 759-761 ◽  
Author(s):  
Lei Xu ◽  
Zhe Li ◽  
Xingqiang Liu ◽  
Jingli Wang ◽  
Xiangheng Xiao ◽  
...  
Keyword(s):  
Thin Film ◽  
Electrical Properties ◽  
Transition Metal ◽  
Thin Film Transistors ◽  
Zno Thin Film ◽  
Doped Zno ◽  
High Valent ◽  
Metal Doped

High Performance Aluminum-Doped ZnO Thin Film Transistors with High-K Gate Dielectrics Fabricated at Low Temperature

2013 ◽  
Vol 11 (8) ◽  
pp. 1509-1512 ◽  
Author(s):  
Dedong Han ◽  
Jian Cai ◽  
Wei Wang ◽  
Liangliang Wang ◽  
Yi Wang ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
High Performance ◽  
Gate Dielectrics ◽  
Zno Thin Film ◽  
High K ◽  
Doped Zno

Bias stress stable aqueous solution derived Y-doped ZnO thin film transistors

2011 ◽  
Vol 21 (35) ◽  
pp. 13524 ◽  
Author(s):  
Taehwan Jun ◽  
Keunkyu Song ◽  
Yangho Jung ◽  
Sunho Jeong ◽  
Jooho Moon
Keyword(s):  
Thin Film ◽  
Aqueous Solution ◽  
Thin Film Transistors ◽  
Zno Thin Film ◽  
Bias Stress ◽  
Doped Zno
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