High Performance Aluminum-Doped ZnO Thin Film Transistors with High-K Gate Dielectrics Fabricated at Low Temperature

2013 ◽  
Vol 11 (8) ◽  
pp. 1509-1512 ◽  
Author(s):  
Dedong Han ◽  
Jian Cai ◽  
Wei Wang ◽  
Liangliang Wang ◽  
Yi Wang ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
High Performance ◽  
Gate Dielectrics ◽  
Zno Thin Film ◽  
High K ◽  
Doped Zno

Low Temperature Post-Annealing of ZnO Thin-Film Transistors with High-k Gate Dielectrics

2019 ◽  
Vol 16 (9) ◽  
pp. 315-322 ◽  
Author(s):  
Henry J. H. Chen ◽  
Barry B. Yeh ◽  
Wei-Yang Chou
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
Gate Dielectrics ◽  
Zno Thin Film ◽  
Post Annealing ◽  
High K

High performance and high stability low temperature aqueous solution-derived Li–Zr co-doped ZnO thin film transistors

2012 ◽  
Vol 22 (12) ◽  
pp. 5390 ◽  
Author(s):  
Yangho Jung ◽  
Wooseok Yang ◽  
Chang Young Koo ◽  
Keunkyu Song ◽  
Jooho Moon
Keyword(s):  
Thin Film ◽  
Aqueous Solution ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
High Performance ◽  
High Stability ◽  
Zno Thin Film ◽  
Doped Zno ◽  
Co Doped

High-performance low-temperature solution-processable ZnO thin film transistors by microwave-assisted annealing

2011 ◽  
Vol 21 (4) ◽  
pp. 1102-1108 ◽  
Author(s):  
Taehwan Jun ◽  
Keunkyu Song ◽  
Youngmin Jeong ◽  
Kyoohee Woo ◽  
Dongjo Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
High Performance ◽  
Zno Thin Film ◽  
Microwave Assisted ◽  
Temperature Solution ◽  
Solution Processable

High Performance Amorphous In–Ga–Zn–O Thin-Film Transistors with Low Temperature High-k Solution Processed Hybrid Gate Insulator

2020 ◽  
Vol 9 (2) ◽  
pp. 025002
Author(s):  
Ployrung Kesorn ◽  
Juan Paolo Bermundo ◽  
Toshiaki Nonaka ◽  
Mami N. Fujii ◽  
Yasuaki Ishikawa ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
High Performance ◽  
Gate Insulator ◽  
Solution Processed ◽  
High K
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