Optical and electrical properties of 2wt.% Al2O3-doped ZnO films and characteristics of Al-doped ZnO thin-film transistors with ultra-thin gate insulators

2010 ◽  
Vol 518 (10) ◽  
pp. 2808-2811 ◽  
Author(s):  
Kyungsoo Jang ◽  
Hyeongsik Park ◽  
Sungwook Jung ◽  
Nguyen Van Duy ◽  
Youngkuk Kim ◽  
...  
2014 ◽  
Vol 35 (7) ◽  
pp. 759-761 ◽  
Author(s):  
Lei Xu ◽  
Zhe Li ◽  
Xingqiang Liu ◽  
Jingli Wang ◽  
Xiangheng Xiao ◽  
...  

2015 ◽  
Vol 11 (8) ◽  
pp. 670-673 ◽  
Author(s):  
Zhe Li ◽  
Lei Xu ◽  
Ablat Abliz ◽  
Yang Hua ◽  
Jinchai Li ◽  
...  

2021 ◽  
Vol 9 ◽  
Author(s):  
Taotao Ai ◽  
Yuanyuan Fan ◽  
Huhu Wang ◽  
Xiangyu Zou ◽  
Weiwei Bao ◽  
...  

Ag-doped ZnO nanorods growth on a PET-graphene substrate (Ag-ZnO/PET-GR) with different Ag-doped content were synthesized by low-temperature ion-sputtering-assisted hydrothermal synthesis method. The phase composition, morphologies of ZnO, and electrical properties were analyzed. Ag-doping affects the initially perpendicular growth of ZnO nanorods, resulting in oblique growth of ZnO nanorods becoming more obvious as the Ag-doped content increases, and the diameter of the nanorods decreasing gradually. The width of the forbidden band gap of the ZnO films decreases with increasing Ag-doped content. For the Ag-ZnO/PET-GR composite structure, the Ag-ZnO thin film with 5% Ag-doped content has the largest carrier concentration (8.1 × 1018 cm−3), the highest mobility (67 cm2 · V−1 · s−1), a small resistivity (0.09 Ω·cm), and impressive electrical properties.


2015 ◽  
Vol 47 (12) ◽  
pp. 3655-3665
Author(s):  
Musbah Babikier ◽  
Qian Li ◽  
Jinzhong Wang ◽  
Dunbo Wang ◽  
Jianming Sun ◽  
...  

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