All-Optical Switch With Cascaded Two-Stage Mach–Zehnder Interferometers Using Saturable Absorption Accompanied by Refractive-Index Change in Graphene

2014 ◽  
Vol 32 (21) ◽  
pp. 4226-4232 ◽  
Author(s):  
Misaki Takahashi ◽  
Hiroki Kishikawa ◽  
Nobuo Goto ◽  
Shin-ichiro Yanagiya
Keyword(s):  
Refractive Index ◽  
Optical Switch ◽  
Refractive Index Change ◽  
Saturable Absorption ◽  
Two Stage ◽  
Index Change ◽  
All Optical ◽  
All Optical Switch

scholarly journals All-optical switch consisting of two-stage interferometers controlled by using saturable absorption of monolayer graphene

2012 ◽  
Vol 20 (24) ◽  
pp. 27322 ◽  
Author(s):  
Masayuki Oya ◽  
Hiroki Kishikawa ◽  
Nobuo Goto ◽  
Shin-ichiro Yanagiya
Keyword(s):  
Optical Switch ◽  
Monolayer Graphene ◽  
Saturable Absorption ◽  
Two Stage ◽  
All Optical ◽  
All Optical Switch

InP-based optical switch module operating through carrier-induced refractive index change

1990 ◽  
Vol 29 (3) ◽  
pp. 191 ◽  
Author(s):  
Takeshi Kato ◽  
Hiroaki Inoue ◽  
Yasushi Takahashi ◽  
Koji K. Ishida
Keyword(s):  
Refractive Index ◽  
Optical Switch ◽  
Refractive Index Change ◽  
Index Change ◽  
Switch Module

DFB Waveguide All-Optical Switching Devices Employing Pump-Induced Refractive Index Change in GaInAsP

2007 ◽  
Vol 31 ◽  
pp. 206-208 ◽  
Author(s):  
Tetsuya Mizumoto ◽  
Yoichi Akano ◽  
Kazuhiko Tamura ◽  
Masaki Yoshimura
Keyword(s):  
Refractive Index ◽  
Optical Switching ◽  
Refractive Index Change ◽  
Distributed Feedback ◽  
Temporal Response ◽  
Index Change ◽  
All Optical ◽  
Optical Switching Devices ◽  
All Optical Switching ◽  
Switching Devices

A pump-induced refractive index change was measured in a passive GaInAsP waveguide together with its temporal response. Also, the temporal response of distributed feedback (DFB) waveguide transmittance modulated by the pump-induced index change was experimentally investigated for an application to all-optical switching devices.

scholarly journals High Quality Factor Silicon Membrane Metasurface for Intensity-Based Refractive Index Sensing

Optics ◽  
2021 ◽  
Vol 2 (3) ◽  
pp. 193-199
Author(s):  
Andrea Tognazzi ◽  
Davide Rocco ◽  
Marco Gandolfi ◽  
Andrea Locatelli ◽  
Luca Carletti ◽  
...  
Keyword(s):  
Refractive Index ◽  
Quality Factor ◽  
Refractive Index Change ◽  
Periodic Array ◽  
Silicon Membrane ◽  
High Quality ◽  
Index Change ◽  
Sensing Mechanism ◽  
Refractive Index Sensing ◽  
All Optical

We propose a new sensing device based on all-optical nano-objects placed in a suspended periodic array. We demonstrate that the intensity-based sensing mechanism can measure environment refractive index change of the order of 1.8×10−6, which is close to record efficiencies in plasmonic devices.

Slow Light Investigation on Power Consumption of Lithium Niobate Phc Switch Based on Linear Electro-Optic Effect

2020 ◽  
Vol 41 (2) ◽  
pp. 145-151 ◽  
Author(s):  
Zaineb Gharsallah ◽  
Monia Najjar ◽  
Vijay Janyani
Keyword(s):  
Refractive Index ◽  
Lithium Niobate ◽  
Applied Voltage ◽  
Slow Light ◽  
Optical Switch ◽  
Extinction Ratio ◽  
Refractive Index Change ◽  
Defect Mode ◽  
Index Change ◽  
Electro Optic

AbstractIn this work, an optical switch based on electro-optic effect is reported. We used defect mode in two-dimensional photonic crystal made of Lithium Niobate. Under an applied voltage of 3 V, a refractive index change of −0.0702 is obtained which has led to a transmittance contrast about 60% for the ON state and a high extinction ratio of about 20 dB. Moreover, Slow light structure performance is investigated to optimize proposed optic switch. Due to elliptic shape of holes, the applied voltage is decreased to 0.5 V. Also, a refractive index change decrease around −0.0481, a transmittance contrast increase 65 %, and an extinction ratio increase by 5 dB have been observed. We used plan wave expansion and finite difference time domain methods to analyze the structures performances. It is seen that a defect mode shift about 40 nm and a switching length of 6.48 μm are obtained with drive voltage of 3 V for simple structure and only 0.5 V for slow light structure.

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